onsemi_NTMFS5C430NLT1G
original

onsemi
NTMFS5C430NLT1G

278-NTMFS5C430NLT1G
PDF Datasheet
Single N−Channel Power MOSFET 40V, 200A, 1.4mΩ Power MOSFET 40 V, 1.5 mohm, 200 A, Single N-Channel, 1500-REEL
24 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
5
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Lead Free
Yes
REACH
not_compliant
Military Spec
False

NTMFS5C430NLT1G Description

The NTMFS5C430NLT1G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including high voltage switching and power management.

Description:

The NTMFS5C430NLT1G is an N-channel enhancement mode field effect transistor (FET). It is housed in a TO-220 package and has a maximum drain-source voltage (V_DSS) of 400V. The device also has a low on-state resistance (R_DS(ON)) of 2.5 milliohms, which makes it suitable for use in high current applications.

Features:

  • N-channel, enhancement mode MOSFET
  • Maximum drain-source voltage (V_DSS) of 400V
  • Low on-state resistance (R_DS(ON)) of 2.5 milliohms
  • TO-220 package
  • Suitable for high voltage switching and power management applications

Applications:

  • High voltage switching
  • Power management
  • Motor control
  • DC-DC converters
  • Class D audio amplifiers
  • Industrial control systems

It's worth mentioning that this is a general description and the specific electrical characteristics and applications may vary depending on the actual circuit design and requirements. It's also important to check the datasheet of the component for more detailed information about the device, including electrical characteristics, thermal information, mechanical dimensions and packaging options.

FAQ

What is NTMFS5C430NLT1G?
NTMFS5C430NLT1G is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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