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NTMFS5C430NLT1G
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NTMFS5C430NLT1G Description
The NTMFS5C430NLT1G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including high voltage switching and power management.
Description:
The NTMFS5C430NLT1G is an N-channel enhancement mode field effect transistor (FET). It is housed in a TO-220 package and has a maximum drain-source voltage (V_DSS) of 400V. The device also has a low on-state resistance (R_DS(ON)) of 2.5 milliohms, which makes it suitable for use in high current applications.
Features:
- N-channel, enhancement mode MOSFET
- Maximum drain-source voltage (V_DSS) of 400V
- Low on-state resistance (R_DS(ON)) of 2.5 milliohms
- TO-220 package
- Suitable for high voltage switching and power management applications
Applications:
- High voltage switching
- Power management
- Motor control
- DC-DC converters
- Class D audio amplifiers
- Industrial control systems
It's worth mentioning that this is a general description and the specific electrical characteristics and applications may vary depending on the actual circuit design and requirements. It's also important to check the datasheet of the component for more detailed information about the device, including electrical characteristics, thermal information, mechanical dimensions and packaging options.



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