onsemi_NTMS10P02R2G
original

onsemi
NTMS10P02R2G

278-NTMS10P02R2G
PDF Datasheet
P-CH MOSFET, -20V, -10A, 14mR, SOIC-8
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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
10A
Current Rating
-10A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
14MR
Element Configuration
Single
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NTMS10P02R2G Description

NTMS10P02R2G Description

The NTMS10P02R2G is a high-performance MOSFET P-CH 20V 8.8A 8SOIC from onsemi, a leading manufacturer in the electronics industry. This single FET is designed to deliver exceptional performance and reliability in a wide range of applications. With its advanced MOSFET technology, the NTMS10P02R2G offers superior electrical characteristics, making it an ideal choice for demanding applications.

NTMS10P02R2G Features

  • Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
  • Drain to Source Voltage (Vdss): 20 V
  • Power Dissipation (Max): 1.6W (Ta)
  • Technology: MOSFET (Metal Oxide)
  • REACH Status: REACH Unaffected
  • Vgs (Max): ±12V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Package: Tape & Reel (TR)
  • Base Product Number: NTMS10

NTMS10P02R2G Applications

The NTMS10P02R2G is ideal for applications that require high voltage and current handling capabilities, such as:

  1. Power Management Systems: The NTMS10P02R2G's high drain-source voltage and continuous drain current make it suitable for power management systems in various electronic devices.
  2. Motor Control Applications: With its low Rds On and high current handling capabilities, the NTMS10P02R2G is an excellent choice for motor control applications, ensuring efficient and reliable operation.
  3. Automotive Electronics: The NTMS10P02R2G's robust performance and compliance with RoHS3 standards make it suitable for use in automotive electronics, where reliability and environmental compliance are critical.

Conclusion of NTMS10P02R2G

The NTMS10P02R2G from onsemi is a high-performance MOSFET P-CH 20V 8.8A 8SOIC that offers exceptional electrical characteristics and reliability. Its advanced MOSFET technology, combined with its unique features such as low Rds On, high drain-source voltage, and compliance with industry standards, make it an ideal choice for a wide range of applications, including power management systems, motor control, and automotive electronics. The NTMS10P02R2G's superior performance and versatility make it a valuable addition to any electronics design.

FAQ

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Yes. NTMS10P02R2G currently shows 2 unit(s) in stock.
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Availability (In Stock : 2 )
Quantity Unit Price Ext. Price
1+ $1.66972 $1.67
10+ $1.41085 $14.11
30+ $1.24972 $37.49
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