onsemi_NTR3A30PZT1G

onsemi
NTR3A30PZT1G  
Single FETs, MOSFETs

onsemi
NTR3A30PZT1G
278-NTR3A30PZT1G
Ersa
onsemi-NTR3A30PZT1G-datasheets-5009097.pdf
MOSFET P-CH 20V 3A SOT23-3
In Stock : 6571

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NTR3A30PZT1G Description

NTR3A30PZT1G Description

The NTR3A30PZT1G is a high-performance single P-Channel MOSFET from onsemi, designed for a wide range of applications in the electronics industry. With its advanced MOSFET technology, this device offers excellent electrical characteristics and reliability, making it an ideal choice for various power management and switching applications.

NTR3A30PZT1G Features

  • Input Capacitance (Ciss) (Max) @ Vds: 1651 pF @ 15 V
  • Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 4.5 V
  • Product Status: Last Time Buy
  • Drain to Source Voltage (Vdss): 20 V
  • Power Dissipation (Max): 480mW (Ta)
  • Technology: MOSFET (Metal Oxide)
  • REACH Status: REACH Unaffected
  • Manufacturer: onsemi
  • Vgs (Max): ±8V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • HTSUS: 8541.21.0095
  • Package: Tape & Reel (TR)
  • Base Product Number: NTR3A30

NTR3A30PZT1G Applications

The NTR3A30PZT1G is ideal for various applications where high performance and reliability are crucial. Some specific use cases include:

  1. Power Management: Due to its low Rds On and high Vdss, this MOSFET is perfect for power management applications, such as voltage regulation and power distribution in electronic devices.
  2. Switching Applications: The NTR3A30PZT1G's fast switching capabilities make it suitable for high-speed switching applications, such as motor control and load switching.
  3. Automotive Electronics: With its high power dissipation and robustness, this MOSFET is well-suited for automotive electronics, such as engine control units and power windows.
  4. Industrial Control: The NTR3A30PZT1G's high Vdss and low Rds On make it an excellent choice for industrial control applications, such as motor drives and power supplies.

Conclusion of NTR3A30PZT1G

The NTR3A30PZT1G is a high-performance single P-Channel MOSFET from onsemi, offering excellent electrical characteristics and reliability. Its unique features, such as low Rds On, high Vdss, and fast switching capabilities, make it an ideal choice for a wide range of applications, including power management, switching, automotive electronics, and industrial control. With its Last Time Buy status, it's essential to secure your supply chain for this high-quality device.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTR3A30PZT1G Documents

Download datasheets and manufacturer documentation for NTR3A30PZT1G

Ersa Mold Compound 07/Sep/2019      
Ersa NTR3A30PZ      
Ersa OBS 01/Mar/2024      
Ersa NTR3A30PZ      
Ersa SOT23 16/Sep/2016      
Ersa onsemi RoHS       Material Declaration NTR3A30PZT1G       onsemi REACH      

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