onsemi_NTTFS3A08PZTAG
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onsemi
NTTFS3A08PZTAG

278-NTTFS3A08PZTAG
PDF Datasheet
Single P-Channel Power MOSFET -20V, -15A, 6.7mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL

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Tech Specifications

Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
6.7mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Single
Fall Time
165ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
5nF
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NTTFS3A08PZTAG Description

The NTTFS3A08PZTAG is a high voltage, high power MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and high voltage switching.

Description:

The NTTFS3A08PZTAG is an N-channel MOSFET with a breakdown voltage (V(BR)) of 80V. It has a continuous drain current (I(D)) of 3.6A and a pulsed drain current (I(D)) of 8A. The device has a low on-state resistance (R(DS(ON))) of 4.5mOhm max, which helps to minimize power dissipation and improve efficiency.

Features:

  • High breakdown voltage (V(BR)) of 80V
  • Continuous drain current (I(D)) of 3.6A
  • Pulsed drain current (I(D)) of 8A
  • Low on-state resistance (R(DS(ON))) of 4.5mOhm max
  • Suitable for use in high voltage applications
  • Designed for use in motor control, power supplies, and high voltage switching

Applications:

  • Motor control
  • Power supplies
  • High voltage switching
  • Industrial control
  • Automotive applications

In summary, the NTTFS3A08PZTAG is a high voltage, high power MOSFET that is suitable for use in a variety of applications, including motor control, power supplies, and high voltage switching. Its high breakdown voltage, low on-state resistance, and continuous and pulsed drain current capabilities make it an ideal choice for these types of applications.

FAQ

What is NTTFS3A08PZTAG?
NTTFS3A08PZTAG is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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