onsemi_NTTFS6H850NTAG
original

onsemi
NTTFS6H850NTAG

278-NTTFS6H850NTAG
PDF Datasheet
Single N−Channel Power MOSFET 80V, 68A, 9.5m?Ω, 1500-REEL
23 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
5
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Lead Free
Yes
REACH
not_compliant
Military Spec
False

NTTFS6H850NTAG Description

NTTFS6H850NTAG Description

The NTTFS6H850NTAG is a high-performance MOSFET (Metal Oxide) device from onsemi, designed for applications requiring high efficiency and reliability. This N-Channel device operates with a drain-to-source voltage (Vdss) of 80V and can handle continuous drain currents of 11A at ambient temperature (Ta) and 68A at case temperature (Tc). It is designed to dissipate up to 3.2W at ambient temperature and 107W at case temperature, making it suitable for power electronics applications.

NTTFS6H850NTAG Features

  • Technology: Advanced MOSFET technology for high efficiency and low power loss.
  • Input Capacitance (Ciss): Low input capacitance of 1140 pF @ 40V for fast switching and reduced power consumption.
  • Gate Charge (Qg): Minimal gate charge of 19 nC @ 10V for quick response and low switching losses.
  • Rds On (Max): Low on-resistance of 9.5mOhm @ 10A, 10V for minimal power dissipation and high efficiency.
  • Vgs(th) (Max): Threshold voltage of 4V @ 70µA for stable operation and easy control.
  • Power Dissipation: High power dissipation capabilities of 3.2W (Ta) and 107W (Tc) for demanding applications.
  • Mounting Type: Surface Mount for compact design and easy integration into PCBs.
  • Package: Tape & Reel (TR) for automated assembly and high production efficiency.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, meeting environmental standards for electronic components.
  • Moisture Sensitivity Level (MSL): Level 1 (Unlimited), allowing for flexible storage and handling conditions.

NTTFS6H850NTAG Applications

The NTTFS6H850NTAG is ideal for a variety of applications where high efficiency, reliability, and performance are critical:

  • Power Electronics: In power supplies, converters, and inverters where high voltage and current handling capabilities are required.
  • Automotive Electronics: For electric vehicles and hybrid vehicles, where high power dissipation and reliability are essential.
  • Industrial Control Systems: In motor drives and control systems where high efficiency and stable operation are crucial.
  • Renewable Energy Systems: In solar inverters and wind power systems, where high power handling and reliability are necessary.

Conclusion of NTTFS6H850NTAG

The NTTFS6H850NTAG from onsemi is a high-performance MOSFET designed for demanding applications in power electronics, automotive, industrial control, and renewable energy systems. Its advanced technology, low on-resistance, and high power dissipation capabilities make it an ideal choice for applications requiring high efficiency and reliability. With its REACH unaffected status, RoHS3 compliance, and moisture sensitivity level of 1, the NTTFS6H850NTAG is a reliable and environmentally friendly solution for your high-performance electronic needs.

FAQ

Are there related or alternative parts for NTTFS6H850NTAG?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does NTTFS6H850NTAG support?
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Availability (In Stock : 35 )
Quantity Unit Price Ext. Price
1+ $0.68572 $0.69
10+ $0.66685 $6.67
30+ $0.65657 $19.70
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