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NUD3112DMT1G

The NUD3112DMT1G is a high-performance power MOSFET from ON Semiconductor. It is designed for use in a variety of power conversion applications, including motor control, power supplies, and battery chargers.

Description:

The NUD3112DMT1G is a N-channel MOSFET with a drain-source voltage (VDS) of -100V and a continuous drain current (ID) of 42A. It features a low on-state resistance (RDS(on)) of 45mΩ maximum at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.

Features:

• N-channel, logic level MOSFET
• Drain-Source voltage (VDS) of -100V
• Continuous Drain Current (ID) of 42A
• Low on-state resistance (RDS(on)) of 45mΩ max at VGS = 10V
• Logic level gate drive compatibility
• Avalanche energy capable
• Low gate charge for fast switching
• High temperature operation up to 175°C

Applications:

• Motor control
• Power supplies
• Battery chargers
• Industrial control
• Class D audio amplifiers
• High efficiency DC-DC converters

In summary, the NUD3112DMT1G is a high-performance power MOSFET from ON Semiconductor that offers low on-state resistance, fast switching, and high temperature operation. It is suitable for use in a variety of power conversion applications, including motor control, power supplies, and battery chargers.