onsemi

NUP2105LT1G

The NUP2105LT1G is a high voltage, high-speed P-channel enhancement mode MOSFET from ON Semiconductor. This MOSFET is designed for use in a variety of applications, including power switching and amplification in power electronics circuits.

Description:

The NUP2105LT1G is a P-channel MOSFET with a high voltage rating of up to 100V and a continuous drain current of up to 3.3A. It is available in a TO-263-2L package, which is suitable for surface mount applications.

Features:

• High voltage rating: The NUP2105LT1G has a high voltage rating of up to 100V, making it suitable for use in high voltage applications.
• High-speed switching: The MOSFET is designed for high-speed switching, with a typical on-resistance of 4.5 ohms (maximum) and a gate charge of 3.5nC (typical).
• Low gate drive requirements: The NUP2105LT1G has low gate drive requirements, which can help to reduce the power consumption of the circuit.
• High temperature operation: The MOSFET is rated for operation over a wide temperature range of -55°C to 175°C.

Applications:

The NUP2105LT1G is suitable for use in a variety of applications, including:

• Power switching and amplification in power electronics circuits
• Motor control and drive circuits
• DC-DC converters and power supplies
• Automotive electronics
• Industrial control systems

In summary, the NUP2105LT1G is a high voltage, high-speed P-channel MOSFET that is suitable for use in a variety of power electronics applications. Its high voltage rating, high-speed switching capabilities, low gate drive requirements, and high temperature operation make it a versatile choice for a range of applications.