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NUP2202W1T2G

The NUP2202W1T2G is a high-performance MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive electronics.

Description:

The NUP2202W1T2G is a N-channel MOSFET with a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of 2.1A. It has a low on-state resistance (RDS(on)) of 3.5 milliohms, which allows for efficient power transfer with minimal power loss. The device also features a fast switching speed, with a typical gate charge (Qg) of 2.5nC and a low input capacitance (Ciss) of 400pF.

Features:

• N-channel MOSFET
• Drain-source voltage (VDS) of -20V
• Continuous drain current (ID) of 2.1A
• Low on-state resistance (RDS(on)) of 3.5 milliohms
• Fast switching speed with a typical gate charge (Qg) of 2.5nC and a low input capacitance (Ciss) of 400pF
• Suitable for use in a wide range of power electronic applications

Applications:

• Motor control
• Power supplies
• Automotive electronics
• Industrial control
• Telecommunications equipment
• Battery management systems
• LED lighting

The NUP2202W1T2G is a high-quality MOSFET transistor that is well-suited for use in a variety of power electronic applications. Its low on-state resistance and fast switching speed make it an ideal choice for applications that require efficient power transfer and high performance.