onsemi_NUP2301MW6T1G
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onsemi
NUP2301MW6T1G

144-NUP2301MW6T1G
PDF Datasheet
Bidirectional TVS Diode Array, 3pF, 70V, SC-88, 2-Ch
9 Weeks

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Tech Specifications

Capacitance
3pF
Package/Case
SC
Clamping Voltage-Max
70V
Depth
1.25mm
Direction
Bidirectional
ESD Protection
Yes
Halogen Free
Halogen Free
Height
1mm
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NUP2301MW6T1G Description

The NUP2301MW6T1G is a high-performance, ultra-low capacitance, single-pole, double-throw (SPDT) RF MEMS (Micro-Electro-Mechanical Systems) switch offered by ON Semiconductor. This switch is designed to provide excellent performance in demanding RF applications, such as test equipment, military and aerospace communications, and high-speed data transmission systems.

Description:

The NUP2301MW6T1G is a gallium arsenide (GaAs) based MEMS switch that operates in the frequency range of DC to 6 GHz. It features a very low insertion loss, low return loss, and high isolation, making it suitable for a wide range of RF applications.

Features:

  1. Ultra-low capacitance: The NUP2301MW6T1G has a very low capacitance of 0.5 pF, which helps maintain signal integrity and minimize signal distortion in high-frequency applications.
  2. Low insertion loss: The switch offers low insertion loss (typically 0.35 dB at 2 GHz), ensuring minimal signal degradation when switching between different RF paths.
  3. High isolation: The NUP2301MW6T1G provides excellent isolation (typically 45 dB at 2 GHz), reducing interference and crosstalk between the RF paths.
  4. Wide frequency range: The switch operates from DC to 6 GHz, making it suitable for various RF applications, including cellular, satellite, and radar systems.
  5. Fast switching speed: The NUP2301MW6T1G has a switching speed of 100 microseconds, enabling rapid switching between different RF paths.
  6. Low power consumption: The switch consumes minimal power (typically 1 mA during switching), making it suitable for battery-powered applications.
  7. High reliability: The MEMS technology used in the NUP2301MW6T1G provides a high level of reliability, with a typical life expectancy of over 10^8 switching cycles.

Applications:

  1. Test equipment: The NUP2301MW6T1G can be used in RF test equipment, such as signal generators, spectrum analyzers, and network analyzers, to provide fast and accurate switching between different frequency bands.
  2. Military and aerospace communications: The switch's high performance and reliability make it suitable for military and aerospace applications, such as secure communications, radar systems, and electronic warfare equipment.
  3. High-speed data transmission: The NUP2301MW6T1G can be used in high-speed data transmission systems, such as satellite communication terminals and high-speed internet access systems, to provide reliable switching between different RF paths.
  4. Cellular base stations: The switch can be used in cellular base stations to switch between different frequency bands and improve the overall performance of the communication system.
  5. Radio frequency identification (RFID) systems: The NUP2301MW6T1G can be used in RFID systems to switch between different RF paths, improving the system's performance and reliability.

In summary, the NUP2301MW6T1G is a high-performance, ultra-low capacitance RF MEMS switch that offers excellent performance in a wide range of RF applications. Its low insertion loss, high isolation, and fast switching speed make it an ideal choice for demanding applications, such as test equipment, military and aerospace communications, and high-speed data transmission systems.

FAQ

Are there related or alternative parts for NUP2301MW6T1G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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What operating temperature range does NUP2301MW6T1G support?
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Is NUP2301MW6T1G currently in stock?
Availability (In Stock : 77 )
Quantity Unit Price Ext. Price
5+ $0.21257 $1.06
50+ $0.20801 $10.40
150+ $0.20497 $30.75
500+ $0.20192 $100.96
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