onsemi

NUP4304MR6T1G

The NUP4304MR6T1G is a high voltage, high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification in power electronics circuits.

Description:

The NUP4304MR6T1G is a N-channel MOSFET transistor with a maximum drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 43A, and a gate-source voltage (VGS) of -30V. It is available in a TO-220 package, which is a popular and widely used package for power transistors.

Features:

• High voltage and high power capabilities
• N-channel MOSFET design
• Maximum drain-source voltage (VDS) of 100V
• Continuous drain current (ID) of 43A
• Gate-source voltage (VGS) of -30V
• Available in a TO-220 package

Applications:

The NUP4304MR6T1G is suitable for use in a variety of power electronics applications, including:

• Power switching and amplification in power electronics circuits
• Motor control and drive circuits
• Power supply circuits
• Inverter circuits
• Battery management systems
• High voltage power conversion circuits

It is important to note that the specific applications for the NUP4304MR6T1G will depend on the specific requirements of the circuit design and the operating conditions. Careful consideration should be given to the electrical characteristics and thermal requirements of the transistor to ensure that it is suitable for the intended application.