onsemi_NVBG040N120SC1
original

onsemi
NVBG040N120SC1

278-NVBG040N120SC1
PDF Datasheet
SiC MOSFET, N-Ch, 1200V, 40mΩ, D2PAK-7L
22 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
7
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263CB
Number of Elements
1
Lead Free
Yes
REACH
unknown
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NVBG040N120SC1 Description

NVBG040N120SC1 Description

The NVBG040N120SC1 from onsemi is a high-performance 1200V, 60A Silicon Carbide (SiC) N-channel power MOSFET in a D2PAK-7 surface-mount package. Designed for automotive-grade applications, it leverages SiCFET technology to deliver superior efficiency, thermal performance, and reliability compared to traditional silicon-based MOSFETs. With a low on-resistance (Rds(on)) of 56mΩ at 20V gate drive and high continuous drain current (Id) of 60A, this device is optimized for high-power switching in demanding environments. Its low gate charge (Qg) of 106nC and fast switching characteristics minimize losses, making it ideal for high-frequency applications.

NVBG040N120SC1 Features

  • High Voltage & Current Rating: 1200V Vdss and 60A Id ensure robust performance in high-power circuits.
  • Low Rds(on): 56mΩ @ 20V, 35A reduces conduction losses, improving efficiency.
  • SiC Technology: Offers lower switching losses, higher thermal conductivity, and better high-temperature stability than silicon MOSFETs.
  • Automotive Grade: Meets stringent reliability standards for automotive applications.
  • Low Gate Charge (Qg): 106nC @ 20V enables faster switching and reduced driver losses.
  • High Power Dissipation: 357W (Tc) ensures reliable operation under heavy loads.
  • Surface-Mount D2PAK-7 Package: Optimized for thermal management and PCB space efficiency.
  • Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL1 (Unlimited) for broad industrial use.

NVBG040N120SC1 Applications

  • Electric Vehicle (EV) Systems: On-board chargers (OBC), DC-DC converters, and traction inverters.
  • Renewable Energy: Solar inverters, wind power systems, and energy storage solutions.
  • Industrial Power Supplies: High-efficiency SMPS, UPS, and motor drives.
  • Fast Charging Infrastructure: DC fast chargers for EVs and high-power adapters.
  • Aerospace & Defense: High-reliability power distribution systems.

Conclusion of NVBG040N120SC1

The NVBG040N120SC1 stands out as a high-efficiency, high-reliability SiC MOSFET tailored for automotive and industrial power electronics. Its low Rds(on), fast switching, and superior thermal performance make it a top choice for applications demanding high voltage, high current, and minimal losses. Whether in EV powertrains, renewable energy systems, or industrial converters, this device delivers exceptional performance, durability, and energy savings, solidifying onsemi's leadership in advanced power semiconductor solutions.

FAQ

What is the standard lead time for NVBG040N120SC1?
The standard lead time for NVBG040N120SC1 is 22 Weeks.
What package or case is NVBG040N120SC1 available in?
What operating temperature range does NVBG040N120SC1 support?
Is NVBG040N120SC1 currently in stock?
Does NVBG040N120SC1 have quantity-based pricing?
Availability (In Stock : 2 )
Quantity Unit Price Ext. Price
1+ $26.67600 $26.68
30+ $25.44172 $763.25
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