


onsemi
NVD5806NT4G
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
NVD5806NT4G Description
NVD5806NT4G Description
The NVD5806NT4G is a high-performance MOSFET (Metal Oxide) device manufactured by onsemi. This N-Channel device is designed for use in a variety of electronic applications, offering superior performance and reliability. With its DPAK package, it is suitable for surface mount applications, making it ideal for space-constrained designs. The NVD5806NT4G is classified as an Automotive-grade component, ensuring its suitability for use in demanding automotive applications.
NVD5806NT4G Features
- Technology: MOSFET (Metal Oxide), providing excellent switching performance and low power dissipation.
- Drain to Source Voltage (Vdss): 40 V, allowing the device to handle high voltage applications.
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc), ensuring robust current handling capabilities.
- Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V, contributing to low power losses and high efficiency.
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, enabling fast switching speeds.
- Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V, reducing parasitic effects and improving performance.
- Vgs (Max): ±20V, providing flexibility in gate voltage requirements.
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, allowing for efficient gate drive.
- Power Dissipation (Max): 40W (Tc), suitable for high-power applications.
- Mounting Type: Surface Mount, ideal for compact designs.
- Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring reliable performance in various environmental conditions.
- REACH Status: REACH Unaffected, compliant with European chemical regulations.
- RoHS Status: ROHS3 Compliant, adhering to environmental standards.
- ECCN: EAR99, indicating export control classification.
- HTSUS: 8541.29.0095, for international trade classification.
- Package: Tape & Reel (TR), facilitating automated assembly processes.
NVD5806NT4G Applications
The NVD5806NT4G is well-suited for a variety of applications due to its high voltage and current handling capabilities, as well as its low on-resistance. Some specific use cases include:
- Automotive Electronics: Ideal for use in powertrain control modules, battery management systems, and other high-power automotive applications.
- Industrial Control Systems: Suitable for motor control, power conversion, and other demanding industrial applications.
- Power Supplies: Can be used in switch-mode power supplies (SMPS) and other power conversion systems.
- Renewable Energy Systems: Capable of handling the high voltages and currents found in solar panel inverters and wind turbine power electronics.
Conclusion of NVD5806NT4G
The NVD5806NT4G is a high-quality, automotive-grade MOSFET that offers excellent performance in high-power and high-voltage applications. Its low on-resistance, fast switching speeds, and robust construction make it an ideal choice for a variety of demanding electronic systems. While the product is now considered obsolete, its unique features and advantages still make it a valuable option for certain applications where high performance and reliability are critical.



.png)
















.png?x-oss-process=image/format,webp/resize,h_32)










