onsemi

NVD5C434NT4G

The NVD5C434NT4G is a high voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The NVD5C434NT4G is an N-channel MOSFET with a drain-source voltage (VDS) of -100V and a continuous drain current (ID) of 43A. It features a low on-state resistance (RDS(on)) of 4.4 mOhm maximum, which helps to minimize power dissipation and improve efficiency in power conversion applications. The device also has a fast switching speed, with a typical gate charge (Qg) of 34nC and a low input capacitance (Ciss) of 830pF.

Features:

• N-channel, high voltage MOSFET
• Drain-source voltage (VDS) of -100V
• Continuous drain current (ID) of 43A
• Low on-state resistance (RDS(on)) of 4.4 mOhm maximum
• Fast switching speed with a typical gate charge (Qg) of 34nC and a low input capacitance (Ciss) of 830pF
• Suitable for use in power electronic applications such as motor control, power supplies, and energy management systems

Applications:

• Motor control
• Power supplies
• Energy management systems
• Switch mode power supplies (SMPS)
• Battery management systems (BMS)
• Inverters
• Class D audio amplifiers
• DC-DC converters

Overall, the NVD5C434NT4G is a high performance MOSFET that offers excellent electrical characteristics and is well-suited for use in a variety of power electronic applications. Its fast switching speed and low on-state resistance make it an ideal choice for applications where efficiency and power management are critical.