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NVD5C446NT4G

NVD5C446NT4G Description

The NVD5C446NT4G is a high-performance MOSFET (Metal Oxide) from onsemi, designed for automotive applications. This N-Channel device features a 40V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of 22A at 25°C and 105A at Tc. The device is available in a DPAK package, making it suitable for surface mount applications.

NVD5C446NT4G Features

• Input Capacitance (Ciss): 2300 pF @ 25 V
• Gate Charge (Qg): 34.3 nC @ 10 V
• Drain to Source Voltage (Vdss): 40 V
• Power Dissipation: 3.1W (Ta), 66W (Tc)
• Technology: MOSFET (Metal Oxide)
• Vgs (Max): ±20V
• Rds On (Max): 3.5mOhm @ 50A, 10V
• Vgs(th) (Max): 4V @ 250µA
• Current - Continuous Drain (Id): 22A (Ta), 105A (Tc)
• Drive Voltage: 10V
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• Grade: Automotive
• Mounting Type: Surface Mount

NVD5C446NT4G Applications

The NVD5C446NT4G is ideal for applications that require high power dissipation and robust performance in automotive environments. Some specific use cases include:

1. Power Management: In automotive power systems, where high current and voltage ratings are essential.
2. Motor Control: For electric vehicle (EV) motor drives, where high efficiency and reliability are critical.
3. Battery Protection: In battery management systems, where the device's high power dissipation capabilities help protect against overcurrent and overvoltage conditions.

Conclusion of NVD5C446NT4G

The NVD5C446NT4G is a versatile and high-performance MOSFET from onsemi, designed for demanding automotive applications. Its unique combination of high drain-to-source voltage, low Rds On, and high power dissipation capabilities make it an ideal choice for power management, motor control, and battery protection systems. With its automotive-grade rating and robust performance, the NVD5C446NT4G offers a reliable solution for engineers designing advanced automotive electronics.