onsemi_NVD6415ANLT4G
original

onsemi
NVD6415ANLT4G

278-NVD6415ANLT4G
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TRANSISTOR POWER, FET, FET General Purpose Power

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Tech Specifications

Package/Case
DPAK
Continuous Drain Current (ID)
23A
Drain to Source Voltage (Vdss)
100V
Element Configuration
Single
Fall Time
71ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.024nF
Max Operating Temperature
175°C
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NVD6415ANLT4G Description

NVD6415ANLT4G Description

The NVD6415ANLT4G is a high-performance MOSFET (Metal Oxide) manufactured by onsemi, designed for automotive applications. This Single FET is built with advanced technology, offering superior performance and reliability in demanding electronic systems. The NVD6415ANLT4G is an N-Channel device with a drain-to-source voltage (Vdss) of 100V, a continuous drain current (Id) of 23A at 25°C, and a maximum power dissipation of 83W. It features a low on-resistance (Rds On) of 52mOhm at 10A and 10V, ensuring efficient power management and reduced energy loss.

NVD6415ANLT4G Features

  • Input Capacitance (Ciss): The NVD6415ANLT4G has a maximum input capacitance of 1024 pF at 25V, ensuring fast switching and minimal signal distortion.
  • Gate Charge (Qg): With a maximum gate charge of 20 nC at 4.5V, this MOSFET provides efficient gate control and reduced power consumption.
  • Drive Voltage: The device supports a maximum drive voltage of 4.5V and a minimum drive voltage of 10V, offering flexibility in circuit design.
  • Vgs (Max): The maximum gate-to-source voltage is ±20V, providing robust operation in various electronic systems.
  • Rds On (Max): The maximum on-resistance is 52mOhm at 10A and 10V, ensuring efficient power management and reduced energy loss.
  • Vgs(th) (Max): The maximum threshold voltage is 2V at 250µA, ensuring reliable device operation.
  • Mounting Type: The NVD6415ANLT4G is surface-mountable, making it suitable for compact and space-constrained applications.
  • Package: The device is available in a DPAK package, providing a robust and reliable solution for high-power applications.

NVD6415ANLT4G Applications

The NVD6415ANLT4G is ideal for various automotive applications, including:

  • Power Management: Its high drain current and low on-resistance make it suitable for managing power in automotive systems, such as battery management and power distribution.
  • Motor Control: The NVD6415ANLT4G can be used in electric vehicle motor control systems, providing efficient power switching and control.
  • LED Lighting: This MOSFET is suitable for automotive LED lighting systems, offering efficient power management and long-lasting performance.
  • Sensors and Actuators: The NVD6415ANLT4G can be used in automotive sensor and actuator applications, providing reliable and efficient power switching.

Conclusion of NVD6415ANLT4G

The NVD6415ANLT4G is a high-performance MOSFET designed for automotive applications, offering superior performance, reliability, and efficiency. Its advanced features, such as low on-resistance, high input capacitance, and robust gate control, make it an ideal choice for power management, motor control, LED lighting, and sensor/actuator applications in the automotive industry. However, it is important to note that the product is currently classified as obsolete, which may affect its availability and long-term support.

FAQ

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NVD6415ANLT4G is available in the DPAK package / case.
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