onsemi_NVH4L027N65S3F

onsemi
NVH4L027N65S3F  
Single FETs, MOSFETs

onsemi
NVH4L027N65S3F
278-NVH4L027N65S3F
Ersa
onsemi-NVH4L027N65S3F-datasheets-4109517.pdf
SF3 FRFET AUTO 27MOHM TO-247-4L
In Stock : 349

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ISO9001
Quality Policy
ISO45001
ISO14001

NVH4L027N65S3F Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the NVH4L027N65S3F belongs to can be classified under the Discrete Semiconductors. NVH4L027N65S3F is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. NVH4L027N65S3F provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Configuration
Package Name
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
V gs(th) Max (V)
Typical Rise Time (ns)
PPAP
OPN in older Technology
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
Wide SOA Mosfets
EU RoHS
Maximum Continuous Drain Current (A)
MSL Temp (°C)
Moisture Sensitivity Level (MSL)
Status
Operating Temperature
Channel Polarity
Maximum Drain Source Voltage (V)
R DS(on) Max @ V GS = 10 V (mΩ)
ECCN
Supplier Temperature Grade
V (BR)DSS Min (V)
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
MSL Type
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
P D Max (W)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
Case Outline
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
I D Max (A)
Maximum Power Dissipation (mW)
C oss Typ (pF)
Gate Level
Supplier Device Package
Minimum Operating Temperature (°C)
C iss Typ (pF)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
V GS Max (V)
Package Height
Mfr
Vgs (Max)
RoHS Status
Q rr Typ (nC)
FET Feature
Maximum Gate Source Voltage (V)
Silicon Family
Package Length
Series
Operating Junction Temperature (°C)
Type
Tab
Part Status
Package Width
Q g Typ @ V GS = 10 V (nC)

NVH4L027N65S3F Documents

Download datasheets and manufacturer documentation for NVH4L027N65S3F

Ersa NVH4L027N65S3F      
Ersa Packaging 08/Feb/2022      

Shopping Guide

Payment Methods
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Delivery Methods
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