onsemi_NVHL040N120SC1
original

onsemi
NVHL040N120SC1

278-NVHL040N120SC1
PDF Datasheet
Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE
27 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Max Operating Temperature
175
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-247
Number of Elements
1
Lead Free
Yes
REACH
unknown
Show More

NVHL040N120SC1 Description

NVHL040N120SC1 Description

The NVHL040N120SC1, manufactured by onsemi, is a high-performance Silicon Carbide (SiC) Field-Effect Transistor (FET) designed for demanding automotive applications. This N-Channel MOSFET offers exceptional performance with a drain-to-source voltage (Vdss) of 1200V, a continuous drain current (Id) of 60A at 25°C, and a maximum power dissipation of 348W at case temperature (Tc). The device is packaged in a robust TO247-3 package and is compliant with RoHS3 standards.

NVHL040N120SC1 Features

  • High Voltage and Current Ratings: The NVHL040N120SC1 boasts a high drain-to-source voltage of 1200V and a continuous drain current of 60A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 56mΩ at 35A and 20V, the NVHL040N120SC1 offers low conduction losses and high efficiency.
  • Silicon Carbide Technology: The SiC material provides excellent thermal conductivity, enabling the device to handle high power dissipation and operate at high temperatures.
  • Automotive Grade: The NVHL040N120SC1 is rated for automotive applications, ensuring reliability and durability in harsh environments.
  • Through-Hole Mounting: The device is mounted through-hole, providing a secure and robust connection in various applications.

NVHL040N120SC1 Applications

The NVHL040N120SC1 is ideal for a wide range of high-power automotive applications, including:

  1. Electric Vehicle (EV) Charging Systems: The high voltage and current ratings make it suitable for EV charging systems, where high efficiency and reliability are critical.
  2. DC-DC Converters: The low on-resistance and high efficiency of the NVHL040N120SC1 make it an excellent choice for DC-DC converters in automotive systems.
  3. Battery Management Systems: The device can be used in battery management systems to regulate and manage battery charging and discharging processes.
  4. Motor Drives: The NVHL040N120SC1 can be used in motor drives for electric vehicles, providing high efficiency and power handling capabilities.

Conclusion of NVHL040N120SC1

The NVHL040N120SC1 is a high-performance Silicon Carbide MOSFET designed for demanding automotive applications. Its high voltage and current ratings, low on-resistance, and robust packaging make it an ideal choice for high-power applications such as EV charging systems, DC-DC converters, battery management systems, and motor drives. With its automotive-grade rating and RoHS3 compliance, the NVHL040N120SC1 offers a reliable and efficient solution for the next generation of automotive electronics.

FAQ

Are there related or alternative parts for NVHL040N120SC1?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does NVHL040N120SC1 support?
Is NVHL040N120SC1 currently in stock?
What is NVHL040N120SC1?
What is the standard lead time for NVHL040N120SC1?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ