onsemi_NVJD4158CT1G
original

onsemi
NVJD4158CT1G

289-NVJD4158CT1G
PDF Datasheet
Complementary Small Signal MOSFET, 3000-REEL
17 Weeks

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
6
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
2
Lead Free
Yes
REACH
Compliant
Military Spec
False

NVJD4158CT1G Description

NVJD4158CT1G Description

The NVJD4158CT1G is a high-performance PFET SC88 20V .88A 1OHM MOSFET array designed and manufactured by onsemi. This product is specifically tailored for automotive applications and offers a range of advanced features that set it apart from similar models in the market.

NVJD4158CT1G Features

  • Technology: The NVJD4158CT1G utilizes MOSFET (Metal Oxide) technology, ensuring high efficiency and reliability in various electronic systems.
  • Grade: This product is classified as automotive grade, making it suitable for use in demanding automotive applications where performance and durability are critical.
  • Input Capacitance (Ciss): The maximum input capacitance is 20pF @ 5V, ensuring fast response times and minimal signal distortion.
  • Gate Charge (Qg): The maximum gate charge is 1.5nC @ 5V and 3.5nC @ 5V, allowing for efficient switching and reduced power consumption.
  • Rds On (Max): The maximum on-state resistance is 1.5Ohm @ 10mA and 4.5V, providing low power loss and high efficiency.
  • Vgs(th) (Max): The maximum threshold voltage is 1.5V @ 100µA, ensuring reliable operation across a wide range of input voltages.
  • Drain to Source Voltage (Vdss): The maximum drain-to-source voltage is 30V, making it suitable for high-voltage applications.
  • Power - Max: The maximum power dissipation is 270mW (Ta), allowing for operation in high-power environments.
  • Current - Continuous Drain (Id): The continuous drain current is 250mA (Ta) and 880mA (Ta), providing ample current capacity for various applications.
  • Mounting Type: The NVJD4158CT1G is a surface-mount device, enabling easy integration into compact and space-constrained designs.
  • Package: The product is available in a tape & reel (TR) package, facilitating automated assembly and reducing production costs.
  • RoHS Status: The NVJD4158CT1G is RoHS3 compliant, ensuring environmental friendliness and compliance with global regulations.
  • Moisture Sensitivity Level (MSL): The moisture sensitivity level is 1 (Unlimited), allowing for extended storage and handling without compromising performance.

NVJD4158CT1G Applications

The NVJD4158CT1G is ideal for a wide range of automotive applications, including:

  • Power management systems
  • Battery protection circuits
  • Motor control and drive systems
  • Lighting and display control
  • Sensor interfaces and signal conditioning

Its high performance, reliability, and automotive-grade features make it a preferred choice for demanding automotive applications where performance and durability are critical.

Conclusion of NVJD4158CT1G

The NVJD4158CT1G is a high-performance PFET SC88 20V .88A 1OHM MOSFET array from onsemi, designed specifically for automotive applications. Its advanced features, such as low input capacitance, high gate charge, and low on-state resistance, make it an ideal choice for high-performance automotive systems. With its automotive-grade classification, RoHS3 compliance, and unlimited moisture sensitivity level, the NVJD4158CT1G offers a reliable and environmentally friendly solution for demanding automotive applications.

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NVJD4158CT1G is a FET, MOSFET Arrays from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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