onsemi
NVJS4151PT1G  
Single FETs, MOSFETs

onsemi
NVJS4151PT1G
278-NVJS4151PT1G
Ersa
onsemi-NVJS4151PT1G-datasheets-11658919.pdf
MOSFET P-CH 20V 3.2A SC88
In Stock : 29115

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    NVJS4151PT1G Description

    NVJS4151PT1G Description

    The NVJS4151PT1G is a high-performance MOSFET (Metal Oxide) device from onsemi, designed for automotive applications. This P-Channel 20V, 3.2A SC88 MOSFET offers excellent electrical characteristics and reliability, making it suitable for a wide range of applications.

    NVJS4151PT1G Features

    • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
    • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
    • Drain to Source Voltage (Vdss): 20 V
    • Power Dissipation (Max): 1.2W (Ta)
    • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Package: Tape & Reel (TR)
    • Grade: Automotive
    • REACH Status: REACH Unaffected
    • RoHS Status: ROHS3 Compliant
    • ECCN: EAR99
    • HTSUS: 8541.29.0095

    The NVJS4151PT1G stands out from similar models due to its low Rds On, high input capacitance, and low gate charge, which contribute to improved efficiency and performance in high-frequency applications.

    NVJS4151PT1G Applications

    The NVJS4151PT1G is ideal for a variety of automotive and industrial applications where high efficiency, reliability, and performance are critical. Some specific use cases include:

    1. Power Management: In automotive systems, this MOSFET can be used for power management and control, providing efficient power distribution and regulation.
    2. Motor Control: The low Rds On and high current handling capabilities make it suitable for motor control applications, such as electric power steering and window lift systems.
    3. LED Lighting: In automotive lighting systems, the NVJS4151PT1G can be used for efficient LED driving and control, ensuring consistent brightness and color.
    4. Automotive Electronics: This MOSFET can be used in various automotive electronic systems, such as infotainment, climate control, and safety features.

    Conclusion of NVJS4151PT1G

    The NVJS4151PT1G is a robust and reliable MOSFET designed for automotive applications. Its unique features, such as low Rds On, high input capacitance, and low gate charge, make it an excellent choice for high-efficiency and high-performance applications. With its automotive-grade rating and compliance with REACH and RoHS regulations, the NVJS4151PT1G is a trusted solution for demanding automotive and industrial applications.

    Tech Specifications

    Unit Weight
    Configuration
    Package Name
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    OPN in older Technology
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    Q gd Typ @ V GS = 4.5 V (nC)
    REACH Status
    Channel Type
    Wide SOA Mosfets
    Maximum Continuous Drain Current (A)
    MSL Temp (°C)
    Status
    Maximum Drain Source Voltage (V)
    Supplier Temperature Grade
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    MSL Type
    Mounting
    C rss Typ (pF)
    Qualification
    Rise Time
    I d Max (A)
    Current - Continuous Drain (Id) @ 25°C
    Vgs th - Gate-Source Threshold Voltage
    Package
    P D Max (W)
    R DS(on) Max @ V GS = 4.5 V (mΩ)
    C oss Typ (pF)
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Vgs (Max)
    Maximum Operating Temperature
    Q g Typ @ V GS = 4.5 V (nC)
    RoHS Status
    Q rr Typ (nC)
    Silicon Family
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Q g Typ @ V GS = 10 V (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    V gs(th) Max (V)
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Channel Polarity
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Grade
    V (BR)DSS Min (V)
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    Case Outline
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Gate Level
    Supplier Device Package
    Minimum Operating Temperature (°C)
    C iss Typ (pF)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    V GS Max (V)
    Mfr
    Mounting Style
    R DS(on) Max @ V GS = 2.5 V (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Package Length
    Series
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    NVJS4151PT1G Documents

    Download datasheets and manufacturer documentation for NVJS4151PT1G

    Ersa NVJS4151P      
    Ersa NVJS4151P      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration NVJS4151PT1G      

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