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NVMFS025P04M8LT1G

NVMFS025P04M8LT1G Description

The NVMFS025P04M8LT1G is a high-performance MOSFET (Metal Oxide) from onsemi, designed for automotive applications. It offers a 40V drain-to-source voltage and a maximum power dissipation of 3.5W at ambient temperature and 44.1W at case temperature. With a surface-mount package and a low input capacitance of 1058 pF at 20V, the NVMFS025P04M8LT1G is ideal for high-speed switching applications.

NVMFS025P04M8LT1G Features

• 40V drain-to-source voltage (Vdss)
• 3.5W power dissipation at ambient temperature (Ta) and 44.1W at case temperature (Tc)
• Low input capacitance of 1058 pF at 20V
• Maximum gate charge (Qg) of 16.3 nC at 10V
• Maximum continuous drain current of 9.4A at 25°C (Ta) and 34.6A at case temperature (Tc)
• Low on-resistance (Rds On) of 23mOhm at 15A and 10V
• Maximum threshold voltage (Vgs(th)) of 2.4V at 255µA
• Drive voltage range of 4.5V to 10V
• Automotive-grade component with REACH unaffected status
• RoHS3 compliant and moisture sensitivity level (MSL) 1

NVMFS025P04M8LT1G Applications

The NVMFS025P04M8LT1G is well-suited for various automotive applications, including:

1. Power window control systems
2. Electric power steering systems
3. Battery management systems
4. In-vehicle infotainment systems
5. LED lighting control

Its low on-resistance and high current handling capabilities make it ideal for applications requiring efficient power management and high-speed switching.

Conclusion of NVMFS025P04M8LT1G

The NVMFS025P04M8LT1G from onsemi is a high-performance MOSFET designed for automotive applications. Its low on-resistance, high current handling, and low input capacitance make it an excellent choice for high-speed switching and power management in automotive systems. With its automotive-grade status and compliance with REACH and RoHS3 regulations, the NVMFS025P04M8LT1G is a reliable and environmentally friendly solution for automotive electronics.