onsemi_NVMFS4C05NT1G

onsemi
NVMFS4C05NT1G  
Single FETs, MOSFETs

onsemi
NVMFS4C05NT1G
278-NVMFS4C05NT1G
Ersa
onsemi-NVMFS4C05NT1G-datasheets-8845167.pdf
MOSFET N-CH 30V 24.7A/116A 5DFN
In Stock : 5068

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    NVMFS4C05NT1G Description

    NVMFS4C05NT1G Description

    The NVMFS4C05NT1G is a high-performance N-Channel MOSFET from onsemi, designed for automotive applications. It offers a unique combination of low on-resistance, high current handling, and robust voltage ratings, making it ideal for a wide range of power management and switching applications in automotive electronics.

    NVMFS4C05NT1G Features

    • Low On-Resistance: The NVMFS4C05NT1G boasts a maximum on-resistance (Rds(on)) of just 3.4mΩ at 30A and 10V, ensuring minimal power loss and high efficiency in switching applications.
    • High Current Handling: With a continuous drain current rating of 24.7A at 25°C (Ta) and an impressive 116A at Tc, this MOSFET can handle demanding current loads in automotive systems.
    • Robust Voltage Ratings: The device can withstand drain-to-source voltages up to 30V, making it suitable for high-voltage automotive applications.
    • Low Gate Charge: A maximum gate charge (Qg) of 30nC at 10V helps reduce switching losses and improve efficiency.
    • Automotive Grade: Designed and tested to meet the stringent requirements of automotive applications, ensuring reliability and durability in harsh environments.
    • Surface Mount Packaging: The 5DFN package allows for compact and efficient PCB layout, ideal for space-constrained automotive electronics.

    NVMFS4C05NT1G Applications

    The NVMFS4C05NT1G is well-suited for a variety of automotive applications, including:

    • Power Management: In battery management systems, DC-DC converters, and other power conversion circuits where high efficiency and reliability are critical.
    • Motor Control: For electric vehicle (EV) and hybrid vehicle (HEV) motor drives, where high current and voltage ratings are essential.
    • LED Lighting: In automotive LED lighting systems, where high efficiency and compact packaging are desired.
    • Infotainment Systems: For power management and switching in advanced infotainment systems, ensuring reliable performance in a compact form factor.

    Conclusion of NVMFS4C05NT1G

    The NVMFS4C05NT1G from onsemi stands out as a high-performance N-Channel MOSFET, offering a unique combination of low on-resistance, high current handling, and robust voltage ratings. Its automotive-grade design, compact surface-mount packaging, and low gate charge make it an ideal choice for a wide range of power management and switching applications in modern automotive electronics. With its advanced features and performance benefits, the NVMFS4C05NT1G is poised to deliver exceptional reliability and efficiency in demanding automotive systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Qualification
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Mounting Style
    Unit Weight
    Vgs - Gate-Source Voltage
    Id - Continuous Drain Current
    Transistor Polarity
    RoHS
    Qg - Gate Charge
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Number of Channels
    Maximum Operating Temperature
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS
    Rds On - Drain-Source Resistance

    NVMFS4C05NT1G Documents

    Download datasheets and manufacturer documentation for NVMFS4C05NT1G

    Ersa NVMFS Series Assy/Test 01/Dec/2023      
    Ersa NVMFS4C05N(WF)      
    Ersa MPN Label Update 08/Sep/2021       MPN label update 11/Oct/2021      
    Ersa NVMFS4C05N(WF)      
    Ersa Enlarged Clip Implementation 15/Jan/2015      
    Ersa onsemi RoHS       Material Declaration NVMFS4C05NT1G      

    Shopping Guide

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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
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