onsemi_NVMFS4C302NT1G

onsemi
NVMFS4C302NT1G  
Single FETs, MOSFETs

onsemi
NVMFS4C302NT1G
278-NVMFS4C302NT1G
Ersa
onsemi-NVMFS4C302NT1G-datasheets-5045034.pdf
MOSFET N-CH 30V 43A/241A 5DFN
In Stock : 20991

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ISO9001
Quality Policy
ISO45001
ISO14001

NVMFS4C302NT1G Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the NVMFS4C302NT1G belongs to can be classified under the Discrete Semiconductors. NVMFS4C302NT1G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. NVMFS4C302NT1G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Unit Weight
V gs (V)
Configuration
Package Name
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
OPN in older Technology
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
Q gd Typ @ V GS = 4.5 V (nC)
REACH Status
Channel Type
Wide SOA Mosfets
Maximum Continuous Drain Current (A)
MSL Temp (°C)
Status
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
MSL Type
Mounting
C rss Typ (pF)
Qualification
Rise Time
Current - Continuous Drain (Id) @ 25°C
Vgs th - Gate-Source Threshold Voltage
Package
P D Max (W)
R DS(on) Max @ V GS = 4.5 V (mΩ)
I D Max (A)
C oss Typ (pF)
Qg - Gate Charge
Power Dissipation (Max)
Package Height
Vgs (Max)
Maximum Operating Temperature
Q g Typ @ V GS = 4.5 V (nC)
RoHS Status
Q rr Typ (nC)
SVHC Exceeds Threshold
Silicon Family
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Q g Typ @ V GS = 10 V (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
V gs(th) Max (V)
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Channel Polarity
Maximum Drain Source Resistance (mOhm)
R DS(on) Max @ V GS = 10 V (mΩ)
ECCN
Grade
V (BR)DSS Min (V)
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
Case Outline
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Gate Level
Supplier Device Package
Minimum Operating Temperature (°C)
C iss Typ (pF)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Mfr
Mounting Style
R DS(on) Max @ V GS = 2.5 V (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Package Length
Series
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number

NVMFS4C302NT1G Documents

Download datasheets and manufacturer documentation for NVMFS4C302NT1G

Ersa Mult Dev Wafer Fab Chg 8/Jan/2021      
Ersa NVMFS4C302N      
Ersa NVMFS4C302N      
Ersa onsemi RoHS       Material Declaration NVMFS4C302NT1G       onsemi REACH      

Shopping Guide

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