onsemi_NVMFS5C404NWFAFT1G
NVMFS5C404NWFAFT1G(1)
NVMFS5C404NWFAFT1G(2)

onsemi
NVMFS5C404NWFAFT1G  
Single FETs, MOSFETs

onsemi
NVMFS5C404NWFAFT1G
278-NVMFS5C404NWFAFT1G
Ersa
onsemi-NVMFS5C404NWFAFT1G-datasheets-3300025.pdf
MOSFET N-CH 40V 53A/378A 5DFN
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    NVMFS5C404NWFAFT1G Description

    The NVMFS5C404NWFAFT1G is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is a part of the company's extensive portfolio of power management and signal management solutions.

    Description:

    The NVMFS5C404NWFAFT1G is an N-channel MOSFET with a drain-source voltage (VDS) of -30V. It is designed for low-voltage, high-current applications and offers excellent electrical characteristics, including low on-state resistance (RDS(on)) and fast switching speeds.

    Features:

    1. Low on-state resistance (RDS(on)): This MOSFET has a low on-state resistance, which helps minimize power dissipation and improve efficiency in power conversion applications.
    2. Fast switching speeds: The NVMFS5C404NWFAFT1G is designed for high-speed switching, making it suitable for applications that require rapid response times.
    3. High input impedance: The high input impedance of this MOSFET allows it to be easily driven by a wide range of control circuits.
    4. Avalanche energy withstand: The device is designed to withstand high levels of energy during avalanche conditions, which can help improve the reliability of the overall system.
    5. Built-in body diode: The MOSFET features a built-in body diode for efficient energy recovery in inductive load applications.

    Applications:

    The NVMFS5C404NWFAFT1G is suitable for a wide range of applications, including:

    1. DC-DC converters: The low on-state resistance and fast switching speeds make this MOSFET ideal for use in buck, boost, and buck-boost converters.
    2. Motor drivers: The device's ability to handle high currents and withstand high energy during avalanche conditions make it suitable for motor control applications.
    3. Power management systems: The NVMFS5C404NWFAFT1G can be used in power management systems for various electronic devices, such as laptops, smartphones, and other portable electronics.
    4. LED lighting: This MOSFET can be used in LED driver circuits to provide efficient power management and control for LED lighting systems.
    5. Class D audio amplifiers: The fast switching speeds and low on-state resistance of the NVMFS5C404NWFAFT1G make it suitable for use in Class D audio amplifiers, which are known for their high efficiency and low power consumption.

    In summary, the NVMFS5C404NWFAFT1G is a versatile and high-performance MOSFET that offers excellent electrical characteristics for a wide range of applications, including power management, motor control, and LED lighting. Its low on-state resistance, fast switching speeds, and high input impedance make it a popular choice for designers looking to improve the efficiency and performance of their electronic systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Grade
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Qualification
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    NVMFS5C404NWFAFT1G Documents

    Download datasheets and manufacturer documentation for NVMFS5C404NWFAFT1G

    Ersa Wafer Fab 16/Aug/2023      
    Ersa NVMFS5C404N      
    Ersa NVMFS5C404N      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFS5C404NWFAFT1G      

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