onsemi_NVMFS5C410NLAFT1G
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onsemi
NVMFS5C410NLAFT1G

278-NVMFS5C410NLAFT1G
PDF Datasheet
Single N-Channel Power MOSFET 40V, 330A, 0.82mΩ 1500 / Tape & Reel, 1500-REEL
8 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
5
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Lead Free
Yes
REACH
not_compliant
Military Spec
False

NVMFS5C410NLAFT1G Description

NVMFS5C410NLAFT1G Description

The NVMFS5C410NLAFT1G is a high-performance MOSFET (Metal Oxide) from onsemi, designed for automotive applications. This N-Channel device offers exceptional performance with a drain-to-source voltage (Vdss) of 40V and continuous drain current ratings of 50A at 25°C ambient temperature and 330A at case temperature. The device is mounted on a surface mount package and is available in a tape and reel configuration for automated assembly.

NVMFS5C410NLAFT1G Features

  • Technology: Advanced MOSFET technology for high efficiency and reliability.
  • Input Capacitance (Ciss): Low input capacitance of 8862 pF @ 25 V, reducing switching losses and improving performance.
  • Gate Charge (Qg): Minimal gate charge of 143 nC @ 10 V, ensuring fast switching and low power consumption.
  • Drain to Source Voltage (Vdss): 40V rating for reliable operation in high-voltage applications.
  • Power Dissipation: Impressive power dissipation capabilities of 3.8W at ambient temperature and 167W at case temperature.
  • Rds On (Max): Low on-resistance of 0.82mOhm @ 50A, 10V, minimizing power losses and improving efficiency.
  • Vgs(th) (Max): Robust threshold voltage of 2V @ 250µA, ensuring stable operation across a wide range of input voltages.
  • Drive Voltage: Optimized drive voltage range of 4.5V to 10V for compatibility with various gate drivers.
  • Mounting Type: Surface mount package for easy integration into compact designs.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards.
  • Moisture Sensitivity Level (MSL): MSL 1, indicating unlimited storage time in a dry environment.

NVMFS5C410NLAFT1G Applications

The NVMFS5C410NLAFT1G is ideal for a wide range of automotive applications, including:

  • Electric Vehicle (EV) Systems: Powertrain control, battery management, and charging systems.
  • Hybrid Electric Vehicles (HEVs): Energy storage, power conversion, and regenerative braking systems.
  • Automotive Electronics: Engine control units, infotainment systems, and lighting controls.
  • Industrial Applications: Motor drives, power supplies, and renewable energy systems.

Conclusion of NVMFS5C410NLAFT1G

The NVMFS5C410NLAFT1G is a powerful MOSFET designed for demanding automotive and industrial applications. Its high voltage and current ratings, combined with low on-resistance and fast switching capabilities, make it an excellent choice for high-efficiency power management. With its robust design and compliance with environmental standards, the NVMFS5C410NLAFT1G is a reliable solution for engineers looking to optimize performance and reliability in their designs.

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