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NVMFS5C410NWFAFT1G
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NVMFS5C410NWFAFT1G Description
The NVMFS5C410NWFAFT1G is a high-performance, low-side MOSFET from ON Semiconductor. It is designed for use in a wide range of applications, including motor control, power management, and industrial control systems.
Description:
The NVMFS5C410NWFAFT1G is an N-channel MOSFET with a drain-source voltage (VDS) of -60V and a continuous drain current (ID) of 40.5A. It features a logic-level gate drive with a maximum gate-source voltage (VGS) of -20V. The device also has a low on-state resistance (RDS(on)) of 40 milliohms, which helps to minimize power dissipation and improve efficiency.
Features:
- N-channel MOSFET
- Drain-source voltage (VDS) of -60V
- Continuous drain current (ID) of 40.5A
- Logic-level gate drive with a maximum gate-source voltage (VGS) of -20V
- Low on-state resistance (RDS(on)) of 40 milliohms
- Avalanche energy rating of 175 Joules
- Operating junction temperature range of -55°C to +175°C
Applications:
The NVMFS5C410NWFAFT1G is suitable for a wide range of applications, including:
- Motor control, such as brushless DC (BLDC) motor control and AC motor control
- Power management, such as battery management systems and power supplies
- Industrial control systems, such as robotic actuators and conveyor systems
- Automotive applications, such as electric power steering (EPS) systems and electric vehicle (EV) charging systems
- Renewable energy systems, such as solar panel power conditioning and wind turbine power conversion
Overall, the NVMFS5C410NWFAFT1G is a versatile and high-performance MOSFET that can be used in a variety of applications requiring efficient and reliable power switching.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.88285 | $3.88 |
| 10+ | $3.70115 | $37.01 |
| 30+ | $3.59315 | $107.79 |
| 100+ | $3.48343 | $348.34 |



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