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NVMFS5C460NLAFT1G

NVMFS5C460NLAFT1G Description

The NVMFS5C460NLAFT1G is a high-performance MOSFET (Metal Oxide) developed by onsemi, designed for automotive applications. This Single FET features an N-Channel, 40V drain-to-source voltage, and continuous drain current ratings of 21A at 25°C ambient temperature and 78A at 150°C case temperature. With a maximum power dissipation of 3.6W at ambient temperature and 50W at case temperature, this MOSFET is well-suited for demanding automotive applications.

NVMFS5C460NLAFT1G Features

• Technology: MOSFET (Metal Oxide)
• Grade: Automotive
• Mounting Type: Surface Mount
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id): 21A (Ta), 78A (Tc)
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25V
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Vgs (Max): ±20V
• Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• REACH Status: REACH Unaffected
• RoHS Status: ROHS3 Compliant
• ECCN: EAR99
• HTSUS: 8541.29.0095
• Package: Tape & Reel (TR)

NVMFS5C460NLAFT1G Applications

The NVMFS5C460NLAFT1G is ideal for a variety of automotive applications, including:

1. Power Management: Due to its high power dissipation and continuous drain current ratings, this MOSFET is suitable for power management systems in vehicles, such as battery management and power distribution.
2. Motor Control: The high drain current and low Rds On make it an excellent choice for motor control applications, including electric power steering and electric vehicle traction inverters.
3. LED Lighting: The NVMFS5C460NLAFT1G can be used in automotive LED lighting systems, providing efficient power management and control.
4. Body Electronics: This MOSFET is suitable for various body electronics applications, such as window lift systems, seat control, and infotainment systems.

Conclusion of NVMFS5C460NLAFT1G

The NVMFS5C460NLAFT1G is a high-performance, automotive-grade MOSFET that offers excellent electrical characteristics and reliability. Its unique features, such as low Rds On, high drain current, and high power dissipation, make it an ideal choice for demanding automotive applications. By leveraging the NVMFS5C460NLAFT1G, engineers can design more efficient and reliable automotive systems, ensuring optimal performance and safety.