onsemi_NVMFS5C628NLWFAFT1G

onsemi
NVMFS5C628NLWFAFT1G  
Single FETs, MOSFETs

onsemi
NVMFS5C628NLWFAFT1G
278-NVMFS5C628NLWFAFT1G
Ersa
onsemi-NVMFS5C628NLWFAFT1G-datasheets-159040.pdf
MOSFET N-CH 60V 28A/150A 5DFN
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NVMFS5C628NLWFAFT1G Description

NVMFS5C628NLWFAFT1G Description

The NVMFS5C628NLWFAFT1G is a high-performance N-Channel MOSFET designed for automotive applications. Manufactured by onsemi, this MOSFET offers excellent electrical characteristics and robust performance in demanding environments. With a drain-to-source voltage of 60V and a continuous drain current of 28A at 25°C, this device is ideal for applications requiring high power handling and efficient switching.

NVMFS5C628NLWFAFT1G Features

  • Technology: MOSFET (Metal Oxide)
  • Grade: Automotive
  • Mounting Type: Surface Mount, Wettable Flank
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Drain to Source Voltage (Vdss): 60 V
  • Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 135µA
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs (Max): ±20V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Package: Tape & Reel (TR)

NVMFS5C628NLWFAFT1G Applications

The NVMFS5C628NLWFAFT1G is well-suited for various automotive applications, including:

  1. Battery Management Systems: Its high voltage and current ratings make it ideal for managing battery charging and discharging in electric and hybrid vehicles.
  2. Motor Control: The low Rds On and high current capability enable efficient motor control in applications such as electric power steering and window lifts.
  3. Power Supplies: The device's high power dissipation and robust performance make it suitable for automotive power supply systems, ensuring reliable operation under varying load conditions.

Conclusion of NVMFS5C628NLWFAFT1G

The NVMFS5C628NLWFAFT1G is a versatile and high-performance MOSFET designed for demanding automotive applications. Its unique combination of high voltage, current, and power ratings, along with its automotive-grade design, makes it an excellent choice for applications requiring efficient power management and control. With its robust performance and compliance with industry standards, the NVMFS5C628NLWFAFT1G is a reliable solution for automotive engineers looking to optimize their designs for performance and reliability.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Operating Junction Temperature (°C)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVMFS5C628NLWFAFT1G Documents

Download datasheets and manufacturer documentation for NVMFS5C628NLWFAFT1G

Ersa Wafer Fab 19/Feb/2021      
Ersa NVMFS5C628NL      
Ersa NVMFS5C628NL      
Ersa onsemi RoHS       Material Declaration NVMFS5C628NLWFAFT1G      

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