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NVMFS5C670NLWFAFT1G

The NVMFS5C670NLWFAFT1G is a high voltage MOSFET from ON Semiconductor. It is a N-channel enhancement mode field effect transistor with a drain to source voltage (VDS) of 650V and a continuous drain current (ID) of 5.5A. The device is offered in a TO-220 package.

Key Features:

• High voltage operation: The device can operate at high voltages up to 650V, making it suitable for a wide range of applications that require high voltage switching.
• Low on-state resistance (RDS(on)): The device has a low on-state resistance, which minimizes power dissipation and improves efficiency.
• Fast switching speed: The device has a fast switching speed, which makes it suitable for high frequency applications.
• High input impedance: The device has a high input impedance, which makes it easy to drive and control.

Applications:

• High voltage switching applications
• Motor control applications
• Power supply applications
• Inverter applications
• Battery management systems
• Industrial control systems

The NVMFS5C670NLWFAFT1G is a high performance MOSFET that is suitable for a wide range of applications that require high voltage switching and fast switching speeds. Its low on-state resistance and high input impedance make it an efficient and easy to control device.