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NVMFS5C670NWFT1G

The NVMFS5C670NWFT1G is a high voltage N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The NVMFS5C670NWFT1G is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (VDS) of 650V and a continuous drain current (ID) of 6.7A. It features a low on-state resistance (RDS(on)) of 4.3mΩ maximum at a gate-to-source voltage (VGS) of 10V, making it ideal for use in high efficiency power conversion applications.

Features:

• High voltage N-channel MOSFET
• VDS of 650V
• ID of 6.7A
• Low on-state resistance (RDS(on)) of 4.3mΩ maximum at VGS of 10V
• Enhancement mode
• Suitable for use in a variety of power electronic applications

Applications:

• Motor control
• Power supplies
• Energy management systems
• High efficiency power conversion
• Industrial control
• Automotive applications

The NVMFS5C670NWFT1G is available in a TO-220 package, making it easy to incorporate into a variety of electronic designs. Its high voltage and low on-state resistance make it a popular choice for designers looking to improve the efficiency and performance of their power electronic systems.