The NVMFS6B14NLT3G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. This device is designed for use in a variety of power electronic applications where high voltage and high current handling capabilities are required.
Description:
The NVMFS6B14NLT3G is an N-channel enhancement mode field-effect transistor (FET) with a drain-to-source voltage (VDS) of 140V and a continuous drain current (ID) of 6.5A. It is housed in a TO-263-3 package, which is suitable for surface mount applications.
Features:
Some of the key features of the NVMFS6B14NLT3G include:
- High Voltage: The device can handle drain-to-source voltages up to 140V, making it suitable for use in high voltage applications.
- High Current: The continuous drain current rating of 6.5A makes it suitable for use in high current applications.
- Low On-State Resistance: The device has a low on-state resistance (RDS(on)) of 40 milliohms, which helps to minimize power dissipation and improve efficiency.
- Fast Switching: The device has a low input capacitance and a fast switching time, making it suitable for use in high frequency applications.
- Avalanche Rated: The device is designed to withstand high energy pulses, making it suitable for use in applications where the device may be subjected to high voltage transients.
Applications:
The NVMFS6B14NLT3G is suitable for use in a variety of power electronic applications, including:
- Motor Control: The device can be used in motor control applications where high voltage and high current handling capabilities are required.
- Power Supplies: The device can be used in power supply applications where high voltage and high current handling capabilities are required.
- Inverters: The device can be used in inverter applications where high voltage and high current handling capabilities are required.
- Battery Management Systems: The device can be used in battery management systems where high voltage and high current handling capabilities are required.
In summary, the NVMFS6B14NLT3G is a high voltage N-channel MOSFET transistor that offers high current handling capabilities, low on-state resistance, and fast switching performance. It is suitable for use in a variety of power electronic applications where high voltage and high current handling capabilities are required.