onsemi_NVMFS6B14NLT3G

onsemi
NVMFS6B14NLT3G  
Single FETs, MOSFETs

onsemi
NVMFS6B14NLT3G
278-NVMFS6B14NLT3G
MOSFET N-CH 100V 11A/55A 5DFN
In Stock : 1441

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NVMFS6B14NLT3G Description

The NVMFS6B14NLT3G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. This device is designed for use in a variety of power electronic applications where high voltage and high current handling capabilities are required.

Description:

The NVMFS6B14NLT3G is an N-channel enhancement mode field-effect transistor (FET) with a drain-to-source voltage (VDS) of 140V and a continuous drain current (ID) of 6.5A. It is housed in a TO-263-3 package, which is suitable for surface mount applications.

Features:

Some of the key features of the NVMFS6B14NLT3G include:

  1. High Voltage: The device can handle drain-to-source voltages up to 140V, making it suitable for use in high voltage applications.
  2. High Current: The continuous drain current rating of 6.5A makes it suitable for use in high current applications.
  3. Low On-State Resistance: The device has a low on-state resistance (RDS(on)) of 40 milliohms, which helps to minimize power dissipation and improve efficiency.
  4. Fast Switching: The device has a low input capacitance and a fast switching time, making it suitable for use in high frequency applications.
  5. Avalanche Rated: The device is designed to withstand high energy pulses, making it suitable for use in applications where the device may be subjected to high voltage transients.

Applications:

The NVMFS6B14NLT3G is suitable for use in a variety of power electronic applications, including:

  1. Motor Control: The device can be used in motor control applications where high voltage and high current handling capabilities are required.
  2. Power Supplies: The device can be used in power supply applications where high voltage and high current handling capabilities are required.
  3. Inverters: The device can be used in inverter applications where high voltage and high current handling capabilities are required.
  4. Battery Management Systems: The device can be used in battery management systems where high voltage and high current handling capabilities are required.

In summary, the NVMFS6B14NLT3G is a high voltage N-channel MOSFET transistor that offers high current handling capabilities, low on-state resistance, and fast switching performance. It is suitable for use in a variety of power electronic applications where high voltage and high current handling capabilities are required.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

NVMFS6B14NLT3G Documents

Download datasheets and manufacturer documentation for NVMFS6B14NLT3G

Ersa Mult Dev EOL 7/Apr/2021      
Ersa NVMFS6B14NL      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFS6B14NLT3G      

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