onsemi_NVMJS2D5N06CLTWG
original

onsemi
NVMJS2D5N06CLTWG

278-NVMJS2D5N06CLTWG
PDF Datasheet
Power MOSFET 60 V, 2.4 mΩ, 155 A, Single N-Channel, 3000-REEL
37 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
4
Min Operating Temperature
-55
Terminal Position
SINGLE
Number of Elements
1
Lead Free
Yes
REACH
not_compliant
Military Spec
False

NVMJS2D5N06CLTWG Description

NVMJS2D5N06CLTWG Description

The NVMJS2D5N06CLTWG from onsemi is a high-performance N-channel MOSFET designed for demanding automotive and industrial applications. With a 60V drain-to-source voltage (Vdss) and continuous drain current (Id) ratings of 31A (Ta) / 164A (Tc), this device delivers robust power handling in a compact 8LFPAK surface-mount package. Its ultra-low on-resistance (Rds(on)) of 2.4mΩ at 50A, 10V ensures minimal conduction losses, enhancing efficiency in high-current circuits. The MOSFET is AEC-Q101 qualified, making it ideal for automotive environments where reliability under harsh conditions is critical.

NVMJS2D5N06CLTWG Features

  • Low Rds(on): 2.4mΩ @ 50A, 10V for reduced power dissipation.
  • High Current Capability: Supports 164A (Tc) pulsed current, suitable for motor drives and power switching.
  • Automotive Grade: Compliant with stringent automotive standards (AEC-Q101).
  • Optimized Gate Charge: Qg(max) = 52nC @ 10V ensures fast switching with minimal gate drive losses.
  • Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexible drive compatibility.
  • Thermal Performance: Power dissipation up to 113W (Tc) enables high-power applications.
  • RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.

NVMJS2D5N06CLTWG Applications

This MOSFET excels in high-efficiency power conversion and switching applications, including:

  • Automotive Systems: Electric power steering (EPS), DC-DC converters, and battery management.
  • Industrial Power Supplies: Synchronous rectification and load switching.
  • Motor Control: BLDC motor drives and servo amplifiers.
  • Energy Storage: Solar inverters and battery protection circuits.
    Its low conduction losses and high thermal performance make it ideal for space-constrained designs requiring reliability under high stress.

Conclusion of NVMJS2D5N06CLTWG

The NVMJS2D5N06CLTWG stands out as a high-efficiency, automotive-grade MOSFET with superior current handling, low Rds(on), and fast switching capabilities. Its 8LFPAK package ensures compact integration, while AEC-Q101 compliance guarantees durability in automotive and industrial environments. Engineers can leverage this device for high-power switching, motor control, and energy-efficient designs, benefiting from its optimized performance and reliability.

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NVMJS2D5N06CLTWG is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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