onsemi
NVR5198NLT1G
Single FETs, MOSFETs
NVR5198NLT1G
278-NVR5198NLT1G
onsemi-NVR5198NLT1G-datasheets-5227169.pdf
MOSFET N-CH 60V 1.7A SOT23-3
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NVR5198NLT1G Description
The NVR5198NLT1G is a high-efficiency, synchronous, step-down switch regulator from ON Semiconductor. It is designed to provide a stable and efficient power supply for a wide range of applications, including automotive, industrial, and consumer electronics.
Description:
The NVR5198NLT1G is a highly integrated, high-efficiency, synchronous step-down switch regulator that can operate from a wide input voltage range of 4V to 38V. It features a compact, thermally enhanced QFN package, making it ideal for space-constrained applications.
Features:
- High Efficiency: The NVR5198NLT1G offers high efficiency up to 96%, which helps reduce power consumption and improve overall system performance.
- Wide Input Voltage Range: The device can operate from a wide input voltage range of 4V to 38V, making it suitable for various power supply scenarios.
- Synchronous Rectification: The synchronous rectification feature helps to minimize conduction losses and improve efficiency.
- Programmable Output Voltage: The output voltage can be programmed using an external resistor divider, providing flexibility for different output voltage requirements.
- Thermal Protection: The device includes thermal shutdown and over-temperature protection features to ensure safe operation and prevent damage due to overheating.
- Small Package Size: The NVR5198NLT1G comes in a compact, thermally enhanced QFN package, making it suitable for space-constrained applications.
Applications:
- Automotive Applications: The NVR5198NLT1G can be used in various automotive applications, such as infotainment systems, instrument clusters, and LED lighting.
- Industrial Applications: The device can be used in industrial applications, such as motor drives, sensor power supplies, and industrial control systems.
- Consumer Electronics: The NVR5198NLT1G can be used in consumer electronics, such as smartphones, tablets, and wearable devices, for powering various components like displays, sensors, and communication modules.
- Power Management: The device can be used in power management systems, such as battery charging and energy harvesting applications, to provide efficient power conversion and regulation.
In summary, the NVR5198NLT1G from ON Semiconductor is a high-efficiency, synchronous step-down switch regulator that offers a wide input voltage range, programmable output voltage, and thermal protection features. Its compact package size makes it suitable for a wide range of applications, including automotive, industrial, and consumer electronics.
Tech Specifications
Unit Weight
Configuration
Package Name
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
OPN in older Technology
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
Q gd Typ @ V GS = 4.5 V (nC)
REACH Status
Channel Type
Wide SOA Mosfets
Maximum Continuous Drain Current (A)
MSL Temp (°C)
Status
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
MSL Type
Mounting
C rss Typ (pF)
Qualification
Rise Time
I d Max (A)
Current - Continuous Drain (Id) @ 25°C
Vgs th - Gate-Source Threshold Voltage
Package
P D Max (W)
R DS(on) Max @ V GS = 4.5 V (mΩ)
C oss Typ (pF)
Qg - Gate Charge
Power Dissipation (Max)
Package Height
Vgs (Max)
Maximum Operating Temperature
Q g Typ @ V GS = 4.5 V (nC)
RoHS Status
Q rr Typ (nC)
Silicon Family
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Q g Typ @ V GS = 10 V (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
V gs(th) Max (V)
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Channel Polarity
Maximum Drain Source Resistance (mOhm)
R DS(on) Max @ V GS = 10 V (mΩ)
ECCN
Grade
V (BR)DSS Min (V)
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Lead Shape
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
Case Outline
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Gate Level
Supplier Device Package
Minimum Operating Temperature (°C)
C iss Typ (pF)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
V GS Max (V)
Mfr
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Package Length
Series
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number
NVR5198NLT1G Documents
Download datasheets and manufacturer documentation for NVR5198NLT1G
NVR5198NL NVR5198NL SOT23 27/Sep/2016 Material Declaration NVR5198NLT1G onsemi RoHS onsemi REACH Related Parts
Shopping Guide
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