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NVTFS6H880NTAG

The NVTFS6H880NTAG is a high voltage N-channel MOSFET from ON Semiconductor. It is designed for high voltage applications and offers several features that make it suitable for a wide range of applications.

Description:

The NVTFS6H880NTAG is a high voltage N-channel MOSFET that features a drain-to-source voltage (VDS) of 880V and a continuous drain current (ID) of 5.6A. It is available in a TO-220 package and has a maximum junction temperature (Tj) of 175°C.

Features:

• High drain-to-source voltage (VDS) of 880V
• Continuous drain current (ID) of 5.6A
• Low on-state resistance (RDS(on))
• High switching speed
• Low gate charge
• Avalanche energy capable
• Available in TO-220 package

Applications:

The NVTFS6H880NTAG is suitable for a wide range of high voltage applications, including:

• Motor control
• Power supplies
• Inverters
• Battery chargers
• Industrial control
• High voltage switching
• Renewable energy systems
  Overall, the NVTFS6H880NTAG is a high performance MOSFET that offers excellent electrical characteristics and is suitable for a wide range of high voltage applications. Its low on-state resistance and high switching speed make it an ideal choice for applications that require efficient power conversion and control.