onsemi_RB521S30T1
original

onsemi
RB521S30T1

280-RB521S30T1
PDF Datasheet
0.2A, 30V, SILICON, SIGNAL DIODE, MINIATURE, PLASTIC, CASE 502-01, 2 PIN

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Tech Specifications

Average Rectified Current
200mA
Package/Case
SOD-523-2
Current Rating
200mA
Element Configuration
Single
Lead Free
Contains Lead
Max Forward Surge Current (Ifsm)
1A
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
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RB521S30T1 Description

RB521S30T1 Description

The RB521S30T1 from onsemi is a Schottky barrier diode designed for surface-mount applications, offering low forward voltage drop and high switching efficiency. With a maximum reverse voltage (Vr) of 30V and an average rectified current (Io) of 200mA, it is optimized for small-signal and low-power circuits. The diode features a leakage current as low as 30 µA @ 10V, ensuring minimal power loss in standby modes. Packaged in a compact SOD-523 (SC-79) form factor, it is ideal for space-constrained designs. Although marked as obsolete, it remains a reliable choice for legacy systems requiring high-speed switching and low power dissipation.

RB521S30T1 Features

  • Low Forward Voltage (Vf): 500 mV @ 200 mA, reducing conduction losses.
  • Fast Switching Speed: Suitable for high-frequency applications (e.g., RF detection, signal clamping).
  • Minimal Leakage: 30 µA @ 10V, enhancing energy efficiency.
  • Surface-Mount Design: SOD-523 package for compact PCB layouts.
  • Wide Operating Range: Supports small-signal currents ≤200mA with robust thermal performance.
  • Compliance: REACH unaffected, EAR99 (ECCN), and HTSUS 8541.10.0070 for global compatibility.

RB521S30T1 Applications

  • Portable Electronics: Power management in wearables, IoT sensors, and battery-powered devices due to low Vf.
  • Signal Demodulation: RF and mixer circuits leveraging its fast recovery time.
  • Voltage Clamping: Protection circuits in low-voltage logic interfaces (e.g., USB, GPIO).
  • DC-DC Converters: Freewheeling diode in step-down converters for efficiency-critical designs.
  • Legacy Systems: Cost-effective replacement in industrial controls and automotive subsystems (non-critical).

Conclusion of RB521S30T1

The RB521S30T1 excels in low-power, high-speed switching scenarios, combining Schottky efficiency with a miniature footprint. While obsolete, its low Vf, minimal leakage, and fast response make it a pragmatic choice for space-constrained, energy-sensitive applications. Engineers should evaluate alternatives for new designs but can rely on this diode for maintenance or niche retrofits where its balance of performance and size remains unmatched.

FAQ

What is RB521S30T1?
RB521S30T1 is a Single Diodes from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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