onsemi_RFD14N05LSM9A

onsemi
RFD14N05LSM9A  
Single FETs, MOSFETs

onsemi
RFD14N05LSM9A
278-RFD14N05LSM9A
Ersa
onsemi-RFD14N05LSM9A-datasheets-1317664.pdf
MOSFET N-CH 50V 14A TO252AA
In Stock : 15294

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RFD14N05LSM9A Description

RFD14N05LSM9A Description

The RFD14N05LSM9A is a high-performance MOSFET N-CH 50V 14A TO252AA device manufactured by onsemi. This single FET is designed for applications requiring high power dissipation and efficient switching. With a maximum drain-source voltage (Vdss) of 50V and continuous drain current (Id) of 14A at 25°C, the RFD14N05LSM9A delivers outstanding performance in various electronic systems.

RFD14N05LSM9A Features

  • High Power Dissipation: The RFD14N05LSM9A can handle a maximum power dissipation of 48W (Tc), making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds On of 100mOhm at 14A and 5V, the device offers low on-resistance for efficient power management.
  • Robust Gate Charge: The maximum gate charge (Qg) is 40 nC at 10V, ensuring fast switching and reduced switching losses.
  • Wide Voltage Range: The device supports a wide voltage range with a maximum Vgs of ±10V and a threshold voltage (Vgs(th)) of 2V at 250µA.
  • Surface Mount Technology: The RFD14N05LSM9A is designed for surface mount applications, providing a compact and reliable solution for space-constrained designs.
  • Compliance: The device is compliant with RoHS3 and REACH standards, ensuring environmental and safety compliance.

RFD14N05LSM9A Applications

The RFD14N05LSM9A is ideal for various applications where high power dissipation, efficient switching, and reliability are crucial. Some specific use cases include:

  1. Power Supplies: The device's high power dissipation and low on-resistance make it suitable for power supply designs, including switching power supplies and battery chargers.
  2. Industrial Control Systems: The RFD14N05LSM9A's robust performance and wide voltage range make it ideal for industrial control systems, such as motor drives and inverters.
  3. Automotive Applications: The device's high power handling capability and reliability make it suitable for automotive applications, including electric vehicle charging systems and power management.

Conclusion of RFD14N05LSM9A

The RFD14N05LSM9A is a high-performance MOSFET N-CH 50V 14A TO252AA device that offers exceptional power dissipation, low on-resistance, and robust performance. Its unique features, such as wide voltage range, surface mount technology, and compliance with RoHS3 and REACH standards, make it an ideal choice for various high-power applications in power supplies, industrial control systems, and automotive applications. With its outstanding technical specifications and performance benefits, the RFD14N05LSM9A stands out as a reliable and efficient solution for demanding electronic systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Typical Output Capacitance (pF)
Tab
Lead Shape
Part Status
SVHC
Maximum Gate Threshold Voltage (V)
Package Width
Typical Gate Charge @ Vgs (nC)

RFD14N05LSM9A Documents

Download datasheets and manufacturer documentation for RFD14N05LSM9A

Ersa Mult PN Mold/Source 01/Dec/2023      
Ersa RFD14N05L/LSM, RFP14N05L      
Ersa Mult Devices 24/Oct/2017       Tape and Box/Reel Barcode Update 07/Aug/2014      
Ersa Logo 17/Aug/2017       Description Chg 01/Apr/2016      
Ersa onsemi RoHS       Material Declaration RFD14N05LSM9A      

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