onsemi_SBAS116LT1G

onsemi
SBAS116LT1G  
Single Diodes

onsemi
SBAS116LT1G
280-SBAS116LT1G
Ersa
onsemi-SBAS116LT1G-datasheets-3191553.pdf
DIODE GEN PURP 75V 200MA SOT23-3
In Stock : 24293

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SBAS116LT1G Description

SBAS116LT1G Description

The SBAS116LT1G is a high-performance, general-purpose diode offered by onsemi, a leading manufacturer in the electronics industry. This device is designed to provide reliable and efficient power management in various applications. With its compact SOT23-3 package, the SBAS116LT1G is ideal for space-constrained designs while maintaining excellent electrical performance.

SBAS116LT1G Features

  • Voltage - DC Reverse (Vr) (Max): 75 V, ensuring robust protection against reverse voltage conditions.
  • Current - Average Rectified (Io): 200mA, suitable for applications requiring moderate current handling.
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, contributing to low power dissipation and high efficiency.
  • Reverse Recovery Time (trr): 3 µs, enabling fast switching and reducing power losses in high-frequency applications.
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz, minimizing parasitic effects and ensuring stable operation.
  • Current - Reverse Leakage @ Vr: 5 nA @ 75 V, providing excellent isolation under reverse bias conditions.
  • Mounting Type: Surface Mount, facilitating easy integration into PCB designs.
  • RoHS Status: ROHS3 Compliant, ensuring environmental responsibility and compliance with regulatory standards.
  • REACH Status: REACH Unaffected, indicating that the product is free from substances of very high concern (SVHCs) regulated under the REACH regulation.

SBAS116LT1G Applications

The SBAS116LT1G is well-suited for a variety of applications where efficient power management and protection are critical. Some specific use cases include:

  1. Power Supplies: The SBAS116LT1G can be used in power supply designs to provide voltage rectification and protection against reverse polarity connections.
  2. Automotive Electronics: This diode is ideal for automotive applications, such as battery protection and voltage regulation, due to its robustness and ability to handle high reverse voltages.
  3. Telecommunications: In telecommunications equipment, the SBAS116LT1G can be used for signal conditioning and voltage stabilization, ensuring reliable operation in high-frequency environments.
  4. Industrial Control Systems: The SBAS116LT1G can be employed in industrial control systems for voltage regulation and protection against voltage spikes and surges.

Conclusion of SBAS116LT1G

The SBAS116LT1G from onsemi is a versatile and high-performance diode that offers excellent electrical characteristics and reliability. Its compact SOT23-3 package, combined with its robust performance specifications, makes it an ideal choice for a wide range of applications, including power supplies, automotive electronics, telecommunications, and industrial control systems. With its RoHS and REACH compliance, the SBAS116LT1G is also an environmentally responsible choice for designers looking to meet regulatory standards.

Tech Specifications

Configuration
PPAP
Product Status
Automotive
Supplier Package
Package / Case
Peak Forward Voltage (V)
Technology
REACH Status
Voltage - DC Reverse (Vr) (Max)
Peak Non-Repetitive Surge Current (A)
EU RoHS
Maximum Continuous Forward Current (A)
Current - Average Rectified (Io)
Operating Temperature - Junction
Moisture Sensitivity Level (MSL)
Capacitance @ Vr, F
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Reverse Leakage @ Vr
Pin Count
Mounting
Lead Shape
HTSUS
Package
Peak Reverse Recovery Time (ns)
Reverse Recovery Time (trr)
PCB changed
HTS
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum DC Reverse Voltage (V)
Speed
Peak Reverse Current (uA)
Package Length
Series
Type
Voltage - Forward (Vf) (Max) @ If
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Max Surge Current
Product
Peak Reverse Voltage
Ir - Reverse Current
RoHS
Minimum Operating Temperature
Qualification
Vf - Forward Voltage
Maximum Diode Capacitance
Maximum Operating Temperature
Recovery Time
If - Forward Current
Pd - Power Dissipation
USHTS

SBAS116LT1G Documents

Download datasheets and manufacturer documentation for SBAS116LT1G

Ersa Compound Qual 14/Jun/2019      
Ersa BAS116LT      
Ersa BAS116LT      
Ersa SOT23 27/Sep/2016      
Ersa onsemi RoHS       onsemi REACH       Material Declaration SBAS116LT1G      

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