onsemi

SBC847BDW1T1G

The SBC847BDW1T1G is a high-performance, high-power Darlington transistor offered by ON Semiconductor. This device is designed to provide high current gain and fast switching capabilities, making it suitable for a wide range of applications.

Description:

The SBC847BDW1T1G is a Darlington transistor in a surface-mount package. It features a high current gain (hFE) of 1000, a collector-emitter voltage (VCEO) of 100V, and a collector-emitter saturation voltage (VCE(sat)) of 2V. The device also has a low input offset voltage and high switching speed, making it ideal for use in high-speed switching applications.

Features:

• High current gain (hFE) of 1000
• Collector-emitter voltage (VCEO) of 100V
• Collector-emitter saturation voltage (VCE(sat)) of 2V
• Low input offset voltage
• High switching speed
• Surface-mount package

Applications:

The SBC847BDW1T1G is suitable for a wide range of applications, including:

• High-speed switching applications
• Power switching applications
• Motor control applications
• Audio amplifiers
• Automotive applications
• Industrial control systems
• Consumer electronics
  In summary, the SBC847BDW1T1G is a high-performance Darlington transistor that offers high current gain and fast switching capabilities. Its low input offset voltage and high switching speed make it an ideal choice for a wide range of applications, including high-speed switching, power switching, motor control, audio amplifiers, automotive applications, industrial control systems, and consumer electronics.