onsemi_SBC847BLT1G

onsemi
SBC847BLT1G  
Single Bipolar Transistors

onsemi
SBC847BLT1G
276-SBC847BLT1G
Ersa
onsemi-SBC847BLT1G-datasheets-2939246.pdf
TRANS NPN 45V 0.1A SOT23-3
In Stock : 10876

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SBC847BLT1G Description

SBC847BLT1G Description

The SBC847BLT1G is a high-performance NPN transistor designed for various applications in the electronics industry. Manufactured by onsemi, this device is part of the Single Bipolar Transistors category and offers a range of technical specifications that make it ideal for specific use cases. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, the SBC847BLT1G delivers reliable performance in demanding environments.

SBC847BLT1G Features

  • Technical Specifications: The SBC847BLT1G boasts a frequency transition of 100MHz, making it suitable for high-speed applications. It has a maximum collector current (Ic) of 100mA and a saturation voltage (Vce) of 600mV at 5mA and 100mA. The device is rated for a maximum power dissipation of 300mW, ensuring efficient operation in various conditions.

  • Performance Benefits: The SBC847BLT1G offers a minimum DC current gain (hFE) of 200 at 2mA and 5V, providing consistent performance across different operating conditions. Its automotive-grade classification and surface-mount packaging make it an ideal choice for automotive electronics and other applications requiring robustness and reliability.

  • Unique Advantages: This device stands out due to its compliance with the REACH regulation, indicating that it does not contain any substances of very high concern. Additionally, the SBC847BLT1G is RoHS3 compliant, making it suitable for environmentally conscious applications. Its moisture sensitivity level (MSL) of 1 allows for unlimited storage time, reducing the risk of damage due to moisture exposure.

SBC847BLT1G Applications

The SBC847BLT1G is ideal for a variety of applications, including:

  • Automotive Electronics: Due to its automotive-grade classification, this transistor is perfect for use in automotive control systems, where reliability and robustness are crucial.

  • General Purpose Amplification: The SBC847BLT1G's high-frequency capabilities make it suitable for general-purpose amplification tasks in various electronic devices.

  • Signal Processing: Its ability to handle high frequencies and high voltages makes it an excellent choice for signal processing applications, such as in communication systems and data transmission devices.

Conclusion of SBC847BLT1G

In conclusion, the SBC847BLT1G is a versatile and high-performing NPN transistor that offers a range of technical specifications and performance benefits. Its automotive-grade classification, high-frequency capabilities, and compliance with environmental regulations make it an ideal choice for a variety of applications in the electronics industry. With its unique advantages and robust performance, the SBC847BLT1G is a reliable solution for demanding applications where consistency and reliability are paramount.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Grade
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Qualification
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

SBC847BLT1G Documents

Download datasheets and manufacturer documentation for SBC847BLT1G

Ersa Compound Qual 14/Jun/2019      
Ersa BC846ALT1G Series      
Ersa BC846ALT1G Series      
Ersa Pd-Coated Cu Wire Update 23/Sep/2015       SOT23 27/Sep/2016      
Ersa onsemi RoHS       onsemi REACH       Material Declaration SBC847BLT1G      

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