onsemi_SBC847BPDW1T1G
original

onsemi
SBC847BPDW1T1G

277-SBC847BPDW1T1G
PDF Datasheet
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
14 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-650mV
Collector-emitter Voltage-Max
600mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
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SBC847BPDW1T1G Description

SBC847BPDW1T1G Description

The SBC847BPDW1T1G is a high-performance bipolar transistor array designed and manufactured by onsemi. This NPN/PNP transistor is housed in a compact SOT-363 package, making it ideal for space-constrained applications. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, the SBC847BPDW1T1G delivers excellent performance in various electronic circuits.

SBC847BPDW1T1G Features

  • Technical Specifications:

    • Frequency - Transition: 100MHz
    • Current - Collector (Ic) (Max): 100mA
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • Power - Max: 380mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Current - Collector Cutoff (Max): 15nA (ICBO)
  • Performance Benefits:

    • Automotive-grade component with a moisture sensitivity level (MSL) of 1, ensuring reliability in harsh environments
    • Surface-mount technology for efficient PCB layout and reduced footprint
    • Active product status, ensuring ongoing availability and support
    • REACH Unaffected and ROHS3 compliant, adhering to environmental regulations
  • Unique Features and Advantages:

    • The SBC847BPDW1T1G's 100MHz transition frequency and 45V breakdown voltage make it suitable for high-speed, high-voltage applications
    • Its low Vce saturation voltage and high current gain provide efficient power management and signal amplification
    • The automotive-grade rating and MSL of 1 make it an ideal choice for demanding automotive and industrial applications

SBC847BPDW1T1G Applications

The SBC847BPDW1T1G is ideal for a wide range of applications, including:

  • Automotive Electronics: Power windows, seat controls, and lighting systems
  • Industrial Controls: Motor drivers, sensor interfaces, and signal processing circuits
  • Consumer Electronics: Audio amplifiers, power supplies, and battery management systems
  • Telecommunications: Signal conditioning, data transmission, and network equipment

Conclusion of SBC847BPDW1T1G

The SBC847BPDW1T1G is a versatile and reliable bipolar transistor array that offers excellent performance in high-speed, high-voltage applications. Its automotive-grade rating, compact SOT-363 package, and environmental compliance make it an ideal choice for demanding applications across various industries. With its unique combination of technical specifications and performance benefits, the SBC847BPDW1T1G stands out as a top choice for engineers designing cutting-edge electronic systems.

FAQ

What is the standard lead time for SBC847BPDW1T1G?
The standard lead time for SBC847BPDW1T1G is 14 Weeks.
What operating temperature range does SBC847BPDW1T1G support?
What is SBC847BPDW1T1G?
What package or case is SBC847BPDW1T1G available in?
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