onsemi_SBC847BWT1G

onsemi
SBC847BWT1G  
Single Bipolar Transistors

onsemi
SBC847BWT1G
276-SBC847BWT1G
Ersa
onsemi-SBC847BWT1G-datasheets-5111844.pdf
TRANS NPN 45V 0.1A SC88/SC70-6
In Stock : 13660

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SBC847BWT1G Description

SBC847BWT1G Description

The SBC847BWT1G is a high-performance NPN transistor designed and manufactured by onsemi. This device is specifically tailored for automotive applications, ensuring reliable operation under demanding conditions. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, the SBC847BWT1G offers excellent performance in a wide range of electronic circuits.

SBC847BWT1G Features

  • High Frequency Performance: The SBC847BWT1G boasts a transition frequency of 100MHz, making it suitable for high-speed switching applications.
  • Low Saturation Voltage: With a maximum Vce saturation of 600mV at 5mA and 100mA, this transistor minimizes power dissipation and improves efficiency.
  • Automotive Grade: Designed to meet the stringent requirements of the automotive industry, the SBC847BWT1G offers reliable operation in harsh environments.
  • Surface Mount Package: The SBC847BWT1G is available in a surface-mount package, facilitating integration into compact, high-density designs.
  • Compliance: This device is REACH unaffected and RoHS3 compliant, ensuring environmental and regulatory compliance.
  • DC Current Gain: A minimum DC current gain (hFE) of 200 at 2mA and 5V ensures consistent performance across a wide range of operating conditions.

SBC847BWT1G Applications

The SBC847BWT1G is ideal for a variety of applications, including:

  • Automotive Electronics: Due to its automotive grade and robust performance, the SBC847BWT1G is well-suited for use in automotive control systems, power management, and lighting applications.
  • Industrial Control: The high-frequency performance and low saturation voltage make it an excellent choice for industrial control systems, where high-speed switching and efficiency are critical.
  • Communication Systems: The SBC847BWT1G's high transition frequency makes it suitable for use in communication systems, such as radio frequency (RF) amplifiers and signal processing circuits.

Conclusion of SBC847BWT1G

The SBC847BWT1G is a versatile and high-performance NPN transistor that offers a combination of high-frequency performance, low saturation voltage, and automotive-grade reliability. Its unique features and advantages make it an ideal choice for a wide range of applications, particularly in the automotive and industrial sectors. With its compliance with environmental and regulatory standards, the SBC847BWT1G is a reliable and efficient solution for demanding electronic designs.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Grade
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Qualification
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Technology
Gain Bandwidth Product fT
DC Current Gain hFE Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS

SBC847BWT1G Documents

Download datasheets and manufacturer documentation for SBC847BWT1G

Ersa Bond Wire 07/Mar/2020      
Ersa BC846-48      
Ersa BC846-48      
Ersa Green Compound Update 04/Mar/2015      
Ersa onsemi RoHS       onsemi REACH       Material Declaration SBC847BWT1G      

Shopping Guide

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