onsemi_SBC856BWT1G
original

onsemi
SBC856BWT1G

276-SBC856BWT1G
PDF Datasheet
PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL
12 Weeks

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Tech Specifications

Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector-emitter Voltage-Max
650mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
100MHz
hFE Min
220
Lead Free
Lead Free
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SBC856BWT1G Description

SBC856BWT1G Description

The SBC856BWT1G is a high-performance PNP bipolar transistor designed by onsemi, suitable for a wide range of applications in the electronics industry. With its automotive-grade rating and surface-mount packaging, this device offers excellent performance and reliability in demanding environments. Key technical specifications include a maximum collector-emitter breakdown voltage of 65V, a maximum collector current of 100mA, and a maximum power dissipation of 150mW. The device also features a low saturation voltage of 650mV at 5mA and 100mA, ensuring efficient operation in various circuits.

SBC856BWT1G Features

  • Automotive-grade rating for reliable performance in harsh environments
  • Surface-mount packaging for easy integration into modern electronic systems
  • Low saturation voltage for improved efficiency in switching applications
  • Robust collector-emitter breakdown voltage of 65V for safe operation in high-voltage circuits
  • Wide operating frequency range up to 100MHz, making it suitable for various communication and signal processing applications
  • Low collector cutoff current of 15nA (ICBO) for minimal power consumption in standby modes
  • RoHS3 compliant and REACH unaffected, ensuring environmental compliance and long-term availability

SBC856BWT1G Applications

The SBC856BWT1G's unique combination of performance, reliability, and environmental compliance makes it an ideal choice for various applications, including:

  1. Automotive electronics, such as engine control modules, power windows, and infotainment systems
  2. Industrial control systems, where high reliability and robustness are essential
  3. Communication equipment, such as base stations and transceivers, benefiting from its wide operating frequency range
  4. Power management circuits in consumer electronics, leveraging its low saturation voltage for improved efficiency
  5. Signal processing and amplification in audio and video systems, taking advantage of its high-frequency capabilities

Conclusion of SBC856BWT1G

In summary, the SBC856BWT1G is a versatile and high-performance PNP bipolar transistor that offers excellent reliability and efficiency in a wide range of applications. Its automotive-grade rating, low saturation voltage, and wide operating frequency range make it an ideal choice for demanding environments and high-performance circuits. With its RoHS3 compliance and REACH unaffected status, the SBC856BWT1G is also an environmentally friendly option for electronics manufacturers looking to meet strict environmental regulations.

FAQ

What package or case is SBC856BWT1G available in?
SBC856BWT1G is available in the 3000 package / case.
What is SBC856BWT1G?
Does SBC856BWT1G have quantity-based pricing?
What voltage specification is listed for SBC856BWT1G?
Are there related or alternative parts for SBC856BWT1G?
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