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SBCP56-10T1G
276-SBCP56-10T1G
PDF Datasheet
1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, SOT-223 (TO-261) 4 LEAD, 1000-REEL
11 Weeks
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Tech Specifications
Package/Case
SOT-223-4
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
130MHz
Lead Free
Lead Free
SBCP56-10T1G Description
Bipolar (BJT) Transistor NPN 80 V 1 A 130MHz 1.5 W Surface Mount SOT-223 (TO-261)
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