onsemi_SBCW72LT1G

onsemi
SBCW72LT1G  
Single Bipolar Transistors

onsemi
SBCW72LT1G
276-SBCW72LT1G
Ersa
onsemi-SBCW72LT1G-datasheets-6001243.pdf
TRANS NPN 45V 0.1A SOT23-3
In Stock : 17724

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SBCW72LT1G Description

SBCW72LT1G Description

The SBCW72LT1G is a high-performance NPN single bipolar transistor designed and manufactured by onsemi. This component is specifically tailored for automotive applications, ensuring reliability and durability in demanding environments. With a frequency transition of 300MHz, the SBCW72LT1G delivers exceptional performance in high-frequency applications.

SBCW72LT1G Features

  • High Frequency Performance: The SBCW72LT1G boasts a frequency transition of 300MHz, making it suitable for high-speed applications.
  • Low Saturation Voltage: With a Vce saturation voltage of just 250mV at 500µA and 10mA, this transistor minimizes power loss and improves efficiency.
  • Automotive Grade: Designed to meet the stringent requirements of the automotive industry, the SBCW72LT1G ensures long-lasting performance and reliability.
  • Surface Mount Technology: The SBCW72LT1G is available in a surface mount package, facilitating easy integration into modern electronic devices.
  • RoHS Compliance: This transistor is compliant with RoHS3 standards, making it an environmentally friendly choice for electronic devices.
  • DC Current Gain: The SBCW72LT1G offers a minimum DC current gain (hFE) of 200 at 2mA and 5V, ensuring consistent performance across a wide range of applications.

SBCW72LT1G Applications

The SBCW72LT1G is ideal for a variety of applications, including:

  • Automotive Electronics: Due to its automotive-grade design, the SBCW72LT1G is perfect for use in automotive control systems, sensors, and power management circuits.
  • High-Speed Communication: With its high frequency transition, this transistor is well-suited for high-speed data communication applications, such as Wi-Fi and Bluetooth modules.
  • Power Management: The SBCW72LT1G's low saturation voltage makes it an excellent choice for power management circuits, where efficiency is critical.
  • Sensors and Actuators: This transistor's high current gain and low leakage current make it ideal for use in sensor and actuator applications, where precise control is required.

Conclusion of SBCW72LT1G

In conclusion, the SBCW72LT1G is a versatile and high-performance NPN single bipolar transistor that offers exceptional performance in a wide range of applications. Its automotive-grade design, high frequency transition, and low saturation voltage make it an ideal choice for demanding applications where reliability and efficiency are critical. With its RoHS compliance and surface mount packaging, the SBCW72LT1G is a forward-thinking solution for modern electronic devices.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Grade
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Qualification
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

SBCW72LT1G Documents

Download datasheets and manufacturer documentation for SBCW72LT1G

Ersa Compound Qual 14/Jun/2019      
Ersa BCW,SBCW72LT1G      
Ersa BCW,SBCW72LT1G      
Ersa Pd-Coated Cu Wire Update 23/Sep/2015       SOT23 27/Sep/2016      
Ersa onsemi RoHS       onsemi REACH       Material Declaration SBCW72LT1G      

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