onsemi_SGF5N150UFTU
original

onsemi
SGF5N150UFTU

279-SGF5N150UFTU
PDF Datasheet
IGBT, Discrete, High Performance, 360-TUBE

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Tech Specifications

Package/Case
SOIC
Collector Emitter Breakdown Voltage
1.5kV
Collector Emitter Saturation Voltage
4.7V
Collector Emitter Voltage (VCEO)
1.5kV
Collector-emitter Voltage-Max
5.5V
Current Rating
5A
Input Type
STANDARD
Lead Free
Lead Free
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SGF5N150UFTU Description

The SGF5N150UFTU is a high voltage N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The SGF5N150UFTU is a high voltage N-channel MOSFET with a drain-source voltage (Vds) of 1500V and a continuous drain current (Id) of 5.3A. It features a low on-state resistance (Rds(on)) of 3.4 milliohms maximum at a gate-source voltage (Vgs) of 10V, which helps to minimize power dissipation and improve efficiency in high current applications.

Features:

  • High voltage operation: 1500V Vds
  • Low on-state resistance: 3.4 milliohms maximum at Vgs = 10V
  • High input impedance: typically 1 x 10^12 ohms at Vgs = 10V
  • Low gate charge: typically 42nC at Vgs = 10V
  • Avalanche energy capable: 200mJ maximum at Ta = 25°C
  • Built-in body diode for efficient reverse conduction

Applications:

  • Motor control
  • Power supplies
  • Energy management systems
  • Industrial control
  • Automotive electronics
  • Renewable energy systems

The SGF5N150UFTU is available in a TO-247AC package, which is suitable for surface-mount applications. It is also RoHS compliant, making it suitable for use in environmentally friendly applications. With its high voltage rating and low on-state resistance, the SGF5N150UFTU is an excellent choice for power electronic applications that require high efficiency and reliability.

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