onsemi_SMBT3946DW1T1G
original

onsemi
SMBT3946DW1T1G

277-SMBT3946DW1T1G
PDF Datasheet
NPN PNP Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
11 Weeks

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Tech Specifications

Collector Emitter Breakdown Voltage
40V
Collector-emitter Voltage-Max
300mV
Lead Free
Lead Free
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
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SMBT3946DW1T1G Description

SMBT3946DW1T1G Description

The SMBT3946DW1T1G is a Bipolar Transistor Array manufactured by onsemi. This NPN/PNP transistor is designed for high-frequency applications, offering a transition frequency of 300MHz and 250MHz. It features a maximum collector current (Ic) of 200mA and a low Vce saturation of 300mV at 5mA and 50mA, and 400mV at 5mA and 50mA. The device is surface mount and comes in a tape and reel packaging, making it suitable for automated assembly processes.

SMBT3946DW1T1G Features

  • High-Frequency Operation: With a transition frequency of 300MHz and 250MHz, the SMBT3946DW1T1G is ideal for high-speed switching and amplification applications.
  • Low Vce Saturation: The low Vce saturation of 300mV at 5mA and 50mA, and 400mV at 5mA and 50mA, ensures efficient operation and low power dissipation.
  • Surface Mount Technology: The surface mount design simplifies the manufacturing process and reduces the overall size of the device.
  • Compliance with Regulations: The SMBT3946DW1T1G is compliant with the RoHS3 directive, making it suitable for environmentally friendly applications.

SMBT3946DW1T1G Applications

The SMBT3946DW1T1G is well-suited for a variety of applications where high-frequency performance and low power dissipation are critical. Some specific use cases include:

  • Automotive Electronics: The device can be used in automotive control systems, such as engine management and infotainment systems, where high-speed switching and low power consumption are essential.
  • Communication Systems: The high transition frequency makes the SMBT3946DW1T1G ideal for use in communication systems, such as mobile phones and base stations, where high-speed signal processing is required.
  • Industrial Control Systems: In industrial control systems, the device can be used for high-speed switching and amplification, providing reliable performance in demanding environments.

Conclusion of SMBT3946DW1T1G

The SMBT3946DW1T1G from onsemi is a high-performance Bipolar Transistor Array that offers a unique combination of high-frequency operation, low power dissipation, and compliance with environmental regulations. Its surface mount design and tape and reel packaging make it an ideal choice for automated assembly processes, while its low Vce saturation and high collector current capabilities make it suitable for a wide range of high-speed switching and amplification applications.

FAQ

What voltage specification is listed for SMBT3946DW1T1G?
The listed voltage-related specification for SMBT3946DW1T1G is 40V.
Are there related or alternative parts for SMBT3946DW1T1G?
What operating temperature range does SMBT3946DW1T1G support?
Is SMBT3946DW1T1G currently in stock?
What is the standard lead time for SMBT3946DW1T1G?
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