onsemi

SMMBT3906WT1G

SMMBT3906WT1G Description

The SMMBT3906WT1G is a PNP single bipolar transistor designed and manufactured by onsemi. It features a frequency transition of 250MHz, making it suitable for high-speed applications. With a maximum collector current (Ic) of 200 mA and a maximum power rating of 150 mW, this device can handle significant current and power demands. The SMMBT3906WT1G also boasts a low Vce saturation of 400mV @ 5mA, 50mA, ensuring efficient operation. It is designed for automotive applications and is mounted using surface mount technology.

SMMBT3906WT1G Features

• 250MHz frequency transition for high-speed operation
• 200 mA maximum collector current (Ic)
• 150 mW maximum power rating
• Low Vce saturation of 400mV @ 5mA, 50mA for efficient operation
• Automotive-grade device
• Surface mount technology for compact design
• 40 V collector-emitter breakdown voltage
• PNP transistor type
• DC current gain (hFE) of 100 @ 10mA, 1V
• Moisture sensitivity level (MSL) of 1 (unlimited)
• REACH unaffected and ROHS3 compliant

SMMBT3906WT1G Applications

The SMMBT3906WT1G's unique combination of high frequency, low saturation voltage, and automotive-grade design make it ideal for various applications, including:

1. Automotive electronics, such as engine control modules and infotainment systems
2. High-speed communication devices, like cellular phones and routers
3. Power management circuits in consumer electronics
4. Industrial control systems requiring high reliability and performance

Conclusion of SMMBT3906WT1G

The SMMBT3906WT1G is a high-performance PNP single bipolar transistor that offers excellent frequency transition, low saturation voltage, and automotive-grade reliability. Its unique features make it suitable for a wide range of applications, from automotive electronics to high-speed communication devices. With its compact surface mount design and adherence to REACH and ROHS3 standards, the SMMBT3906WT1G is a reliable choice for demanding applications in the electronics industry.