onsemi_SMMBT5401LT1G
original

onsemi
SMMBT5401LT1G

276-SMMBT5401LT1G
PDF Datasheet
PNP BJT Transistor, 150V, 500mA, SOT-23
12 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
-160V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
-200mV
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
100MHz
Height
1.01mm
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SMMBT5401LT1G Description

SMMBT5401LT1G Description

The SMMBT5401LT1G is a PNP single bipolar transistor designed and manufactured by onsemi. This device is known for its exceptional performance and reliability, making it a popular choice in various electronic applications. With a maximum collector-emitter breakdown voltage of 150V and a maximum collector current of 500mA, the SMMBT5401LT1G is capable of handling high power and voltage requirements. Its 300MHz transition frequency and low saturation voltage of 500mV at 5mA and 50mA make it an ideal choice for high-speed switching applications.

SMMBT5401LT1G Features

  • High Power and Voltage Handling: The SMMBT5401LT1G can handle a maximum power of 300mW and a collector-emitter breakdown voltage of 150V, making it suitable for high-power applications.
  • High-Speed Switching: With a transition frequency of 300MHz and a low saturation voltage, this device is ideal for high-speed switching applications.
  • Surface Mount Technology: The SMMBT5401LT1G is designed for surface mount applications, providing a compact and efficient solution for space-constrained designs.
  • RoHS Compliance: This device is compliant with the RoHS3 directive, making it an environmentally friendly choice for electronic designs.
  • REACH Unaffected Status: The SMMBT5401LT1G is not affected by the REACH regulation, ensuring its continued availability for use in electronic designs.

SMMBT5401LT1G Applications

The SMMBT5401LT1G is an ideal choice for various applications due to its high power and voltage handling capabilities, as well as its high-speed switching performance. Some specific use cases include:

  1. Power Amplifiers: The high power and voltage handling capabilities of the SMMBT5401LT1G make it suitable for use in power amplifiers, where high power and voltage requirements are necessary.
  2. Switching Regulators: The high-speed switching performance of this device makes it an excellent choice for switching regulators, where fast switching times are required.
  3. RF Applications: The 300MHz transition frequency of the SMMBT5401LT1G makes it suitable for use in RF applications, where high-frequency performance is necessary.

Conclusion of SMMBT5401LT1G

The SMMBT5401LT1G is a high-performance PNP single bipolar transistor that offers excellent power and voltage handling capabilities, as well as high-speed switching performance. Its surface mount technology, RoHS compliance, and REACH unaffected status make it an ideal choice for a wide range of electronic applications. With its unique features and advantages, the SMMBT5401LT1G stands out as a reliable and efficient solution for high-power and high-speed applications in the electronics industry.

FAQ

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