
onsemi
SMMBT5551LT3G
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
SMMBT5551LT3G Description
SMMBT5551LT3G Description
The SMMBT5551LT3G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Packaged in a compact SOT-23-3 surface-mount form factor, it offers a robust 160V collector-emitter breakdown voltage (VCEO) and a 600mA continuous collector current (IC), making it suitable for medium-power circuits. With a low VCE(sat) of 200mV at 5mA base current (IB) and 50mA collector current, it ensures efficient switching performance. The device is RoHS3 compliant, REACH unaffected, and rated for MSL 1 (unlimited shelf life), ensuring reliability in harsh environments.
SMMBT5551LT3G Features
- High Voltage Tolerance: 160V VCEO for robust operation in high-voltage circuits.
- Low Saturation Voltage: 200mV @ 5mA IB, 50mA IC minimizes power loss in switching applications.
- High DC Current Gain (hFE): 80 (min) @ 10mA IC, 5V VCE ensures strong signal amplification.
- Low Leakage Current: Collector cutoff current (ICEO) of just 100nA enhances efficiency.
- Compact & Reliable: SOT-23-3 package with 225mW max power dissipation, ideal for space-constrained designs.
- Compliance: ROHS3, REACH, and EAR99 certified for global market suitability.
SMMBT5551LT3G Applications
- Power Management: Efficient switching in DC-DC converters, voltage regulators, and load switches.
- Signal Amplification: Audio preamps, sensor interfaces, and low-noise analog circuits.
- Industrial Controls: Relay drivers, motor controllers, and solenoid drivers due to high voltage tolerance.
- Consumer Electronics: Used in LED drivers, power supplies, and portable devices.
- Automotive Systems: Suitable for non-critical automotive electronics where reliability is key.
Conclusion of SMMBT5551LT3G
The SMMBT5551LT3G stands out as a versatile NPN transistor, combining high voltage capability, low saturation loss, and compact packaging. Its high hFE and low leakage make it ideal for precision analog and switching applications, while its compliance and reliability ensure broad industrial adoption. Engineers can leverage its performance in power-efficient designs, particularly where space and efficiency are critical.



.png)

















.png?x-oss-process=image/format,webp/resize,h_32)










