onsemi_SMMUN2114LT1G
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onsemi
SMMUN2114LT1G

292-SMMUN2114LT1G
PDF Datasheet
PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
9 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Halogen Free
Halogen Free
hFE Min
80
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
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SMMUN2114LT1G Description

SMMUN2114LT1G Description

The SMMUN2114LT1G is a pre-biased PNP bipolar transistor designed and manufactured by onsemi. This single device is engineered for high performance and reliability in various electronic applications. With a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vce) of 50 V, the SMMUN2114LT1G offers robust performance in demanding environments.

SMMUN2114LT1G Features

  • Technical Specifications: The SMMUN2114LT1G boasts a maximum Vce saturation of 250 mV at 300 µA and 10 mA, ensuring efficient power management. Its maximum power dissipation is 246 mW, making it suitable for high-power applications. The device also features a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, providing consistent performance across a wide range of operating conditions.

  • Unique Advantages: The SMMUN2114LT1G's pre-biasing feature simplifies circuit design and reduces the need for external biasing components, making it an ideal choice for space-constrained applications. Its surface-mount packaging allows for easy integration into modern electronic devices.

  • Compliance and Certifications: The SMMUN2114LT1G is compliant with the RoHS3 directive, making it suitable for environmentally conscious applications. It is also classified as EAR99 and REACH unaffected, ensuring global market access.

SMMUN2114LT1G Applications

The SMMUN2114LT1G is ideal for a variety of applications, including:

  • Automotive Electronics: Its high power dissipation and robust performance make it suitable for automotive control systems and power management circuits.
  • Industrial Control Systems: The device's ability to handle high currents and voltages makes it an excellent choice for industrial control systems, where reliability and performance are critical.
  • Telecommunications Equipment: The SMMUN2114LT1G's pre-biasing feature simplifies the design of telecommunications equipment, reducing component count and improving overall system reliability.

Conclusion of SMMUN2114LT1G

The SMMUN2114LT1G is a versatile and high-performance pre-biased PNP bipolar transistor that offers unique advantages over similar models. Its combination of technical specifications, unique features, and compliance with industry standards make it an ideal choice for a wide range of applications in the electronics industry. With its pre-biasing feature, the SMMUN2114LT1G simplifies circuit design and reduces component count, making it a valuable addition to any engineer's toolkit.

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Yes. SMMUN2114LT1G currently shows 4269 unit(s) in stock.
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Availability (In Stock : 4269 )
Quantity Unit Price Ext. Price
10+ $0.07812 $0.78
100+ $0.06252 $6.25
300+ $0.05471 $16.41
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