onsemi_SMMUN2214LT1G
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onsemi
SMMUN2214LT1G

292-SMMUN2214LT1G
PDF Datasheet
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
11 Weeks

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ISO9001
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Tech Specifications

Package / Case
SOT-23-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Halogen Free
Halogen Free
Height
1.01mm
hFE Min
80
Lead Free
Lead Free
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SMMUN2214LT1G Description

SMMUN2214LT1G Description

The SMMUN2214LT1G is a single, pre-biased NPN bipolar transistor offered by onsemi, designed for high performance in various electronic applications. With a maximum collector current of 100 mA, it provides ample power handling capabilities. The device features a low saturation voltage of 250 mV at 10 mA, ensuring efficient operation in low-voltage circuits. The SMMUN2214LT1G is mounted on a surface mount package, making it ideal for compact designs.

SMMUN2214LT1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100 mA
    • Base resistor (R1): 10 kOhms
    • Emitter-base resistor (R2): 47 kOhms
    • Vce saturation (Max) @ Ib, Ic: 250 mV @ 300 µA, 10 mA
    • Collector-emitter breakdown voltage (Max): 50 V
    • Maximum power dissipation: 246 mW
    • DC current gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V
    • Cutoff current (Ic): 500 nA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Low saturation voltage for efficient operation
    • High power handling capabilities
    • Compact surface mount package for space-saving designs
    • RoHS3 compliant and REACH unaffected, ensuring environmental compliance
  • Unique Advantages:

    • Pre-biased design simplifies circuit design and reduces external components
    • Robust performance across a wide range of operating conditions

SMMUN2214LT1G Applications

The SMMUN2214LT1G is ideal for various applications where a pre-biased NPN bipolar transistor is required. Some specific use cases include:

  1. Low-voltage circuits: The low saturation voltage makes it suitable for low-voltage applications where efficiency is crucial.
  2. Compact designs: The surface mount package allows for space-saving designs in densely populated circuits.
  3. Automotive electronics: The robust performance and environmental compliance make it suitable for automotive applications.
  4. Industrial control systems: The high power handling capabilities and wide operating range make it ideal for industrial control systems.

Conclusion of SMMUN2214LT1G

The SMMUN2214LT1G is a versatile, pre-biased NPN bipolar transistor that offers a combination of high performance, compact design, and environmental compliance. Its unique features, such as low saturation voltage and pre-biased design, make it an excellent choice for a wide range of applications, including low-voltage circuits, compact designs, automotive electronics, and industrial control systems. With its robust performance and adherence to environmental standards, the SMMUN2214LT1G is a reliable solution for demanding electronic applications.

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